Unlock instant, AI-driven research and patent intelligence for your innovation.

A processing method of ferroelectric single crystal material without dielectric dispersion in microwave frequency band

A ferroelectric single crystal, microwave frequency band technology, applied in the direction of polycrystalline material growth, single crystal growth, single crystal growth, etc., can solve the problems of unfavorable ferroelectrics, achieve good frequency stability, huge application value, and stable performance Effect

Inactive Publication Date: 2017-01-04
XI AN JIAOTONG UNIV
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

And such a dielectric dispersion is unfavorable for the application of ferroelectrics in the microwave frequency band

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A processing method of ferroelectric single crystal material without dielectric dispersion in microwave frequency band
  • A processing method of ferroelectric single crystal material without dielectric dispersion in microwave frequency band

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] A method for processing a ferroelectric single crystal material without dielectric dispersion in the microwave frequency band, comprising a two-step processing process of high temperature annealing and variable temperature stepwise polarization, specifically comprising the following steps:

[0032] 1) High-temperature annealing: the ferroelectric single crystal material (PIN-PMN-PT) grown by the improved Bridgman technique was polished and machined with 1000# sandpaper to form a cylindrical sample with a diameter of 2 mm and a length of 5 mm. A pair of parallel electrodes were first prepared by vacuum sputtering on both ends of the cylinder (test surface). The parallel electrodes include a metal Cr electrode with a thickness of 50nm in contact with the ferroelectric single crystal material, and then sputtering on the metal Cr electrode to prepare a layer of metal Pt electrode with a thickness of 200nm. Heat to 500°C (or 200°C above the Curie temperature) in an air sinte...

Embodiment 2

[0037]A method for processing a ferroelectric single crystal material without dielectric dispersion in the microwave frequency band, comprising a two-step processing process of high temperature annealing and variable temperature stepwise polarization, specifically comprising the following steps:

[0038] 1) High temperature annealing: The ferroelectric single crystal material (PIN-PMN-PT) grown by the improved Bridgman technique is polished and machined with 1000# sandpaper to form a cylindrical sample with a diameter of 1.5mm and a length of 4mm , a pair of parallel electrodes were first prepared by vacuum sputtering on both ends of the cylinder (test surface). The parallel electrodes include a metal Cr electrode with a thickness of 70nm in contact with the ferroelectric single crystal material, and then sputtering on the metal Cr electrode to prepare a layer of metal Pt electrode with a thickness of 245nm. Heat to 500°C (or 200°C above the Curie temperature) in an air sinter...

Embodiment 3

[0041] A method for processing a ferroelectric single crystal material without dielectric dispersion in the microwave frequency band, comprising a two-step processing process of high temperature annealing and variable temperature stepwise polarization, specifically comprising the following steps:

[0042] 1) High-temperature annealing: the ferroelectric single crystal material (PIN-PMN-PT) grown by the improved Bridgman technique was polished and machined with 1000# sandpaper to form a cylindrical sample with a diameter of 1 mm and a length of 8 mm. A pair of parallel electrodes were first prepared by vacuum sputtering on both ends of the cylinder (test surface). The parallel electrodes include a metal Cr electrode with a thickness of 100nm in contact with the ferroelectric single crystal material, and then sputtering on the metal Cr electrode to prepare a layer of metal Pt electrode with a thickness of 300nm. Heat to 500°C (or 200°C above the Curie temperature) in an air sint...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
lengthaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for processing a ferroelectric single crystal material without dielectric dispersion in the microwave frequency band. The domain wall in the ferroelectric single crystal is removed through a temperature-varying and step-by-step polarization process, so that the single crystal changes from a multi-domain state to a single domain state. state transition, while reducing the dielectric dispersion due to the relaxation of the mobile domain wall, and finally obtain the dielectric response of the intrinsic ferroelectric lattice with good frequency stability. The Pb(In1 / 2Nb1 / 2)O3-Pb(Mg1 / 3Nb2 / 3)O3-PbTiO3(PIN-PMN-PT) ternary system ferroelectric single crystal processed by this process has the following characteristics in the microwave frequency band: The real part of the dielectric constant between the 1000MHz frequency band is stable between 160 and 161, and the imaginary part is stable between 1.3 and 3.2. The change rate of the dielectric constant in this frequency band is within ±0.436%, which can be considered to be within the microwave frequency band There is no dielectric dispersion. The ferroelectric single crystal material processed by the process of the invention has good frequency stability and stable performance in a bandwidth of nearly 1000 MHz, and can be used as a potential material in the field of microwave electronic devices.

Description

technical field [0001] The invention belongs to the technical field of electronic material processing technology, and in particular relates to a processing method for a ferroelectric single crystal material without dielectric dispersion in the microwave frequency band. Background technique [0002] With the development of modern communication technologies such as mobile communication, satellite communication, bluetooth technology and wireless local area network, the frequency of use of electronic components is constantly moving towards high frequency and microwave frequency bands. The demand for components such as high-frequency capacitors and microwave substrates is also increasing. The development of dielectric materials in the microwave segment is even more rapid, and its market share is also expanding. With the miniaturization, chip and integration of modern communication equipment, the microwave (300MHz-300GHz) dielectric properties of electronic materials have also re...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C30B30/02
Inventor 靳立李飞
Owner XI AN JIAOTONG UNIV