Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Stripper for stripping photoresist

A stripping liquid and solvent technology, applied in the field of photoresist, can solve the problems of affecting the safety of operators, corroding metal wiring, poor stripping effect, etc., achieve good stripping effect, increase stripping speed, and reduce environmental pollution

Active Publication Date: 2015-01-28
SHENZHEN CAPCHEM TECH
View PDF3 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, most of the existing stripping solutions have problems such as corrosion of metal wiring, photoresist residue, environmental pollution, affecting the safety of operators, and poor stripping effects.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Stripper for stripping photoresist

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0018] In this example, the substrates with photoresist are manufactured using the existing technology, and the prepared substrates with photoresist are respectively immersed in the stripping solution of the test group. For rinsing treatment, the components and dosage of each test group are shown in Table 2. The peeling results were carried out with reference to the conventional metal corrosion resistance and peelability evaluation standards. The metal corrosion resistance and peelability evaluation standards are shown in Table 1, and the peeling results are shown in Table 2. In this example, the balance in each test group is deionized water.

[0019] Table 1 Evaluation criteria of stripping liquid effect

[0020] peeling effect Corrosion resistance of metal wiring Stripping property of photoresist A No corrosion observed at all completely stripped B Almost no corrosion is observed almost completely stripped C corroded There is a little re...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses stripper for stripping photoresist. The stripper comprises the following ingredients by weight percent: 2 to 15 percent of organic amines, 75 to 97.5 percent of organic solvents and 0.2 to 10 percent of additive; the organic amines are at least two of EMA, DEA, TEA, MMEA and MDEA; the organic solvents include a dihydroxyethyl solvent and an amide solvent, wherein the dihydroxyethyl solvent is at least one of BDG, methyl digol, diethylene glycol tert-butyl ether and diethylene glycol ether, and the amide solvent is at least one of NMF, DMF and DMAC; the additive is at least one of cyclohexanol hexaphosphate, alkali salt of amino acid, BTA, 1-HBTA, TACM and DMNA. According to the stripper, more than two organic amines are matched with the mixed solvents, and stripping is rapid; the additive can prevent the metal corrosion, the organic solvents are good in hydrophilia, the attachment and residue of photoresist can be avoided, and the environment pollution is hardly caused.

Description

technical field [0001] The present application relates to the field of photoresist, in particular to a stripping solution for stripping photoresist. Background technique [0002] Photoresist, also known as photoresist, is mainly composed of three components: photosensitive resin, sensitizer and solvent. After the photosensitive resin is exposed to light, the photocuring reaction can quickly occur in the exposed area, so that the physical properties of the material, especially the solubility and affinity, will change significantly. After exposure, development, etching, diffusion, ion implantation, metal deposition and other processes, the required micro-patterns are transferred from the mask to the processed substrate, and finally the remaining photoresist in the unexposed part is washed away by the stripping solution , thus completing the entire graphics transfer process. [0003] However, most of the existing stripping solutions have problems such as corrosion of metal wi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/42
Inventor 鄢艳华康威
Owner SHENZHEN CAPCHEM TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com