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pnin type ingaas infrared detector

A technology of infrared detectors and detectors, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve problems such as inappropriateness, achieve good versatility, suppress transportation, and reduce requirements

Inactive Publication Date: 2017-04-05
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Using this technology can effectively suppress dislocations and improve the quality of the absorbing layer, thereby improving the performance of the detector. However, this technology needs to grow a very thick buffer layer to grow the absorbing layer of the required composition.
In addition, since the InGaAs buffer layer is opaque, this buffer layer structure is not suitable for arrays and focal plane detectors that often adopt backside illumination and flip-down packaging schemes.

Method used

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  • pnin type ingaas infrared detector

Examples

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Effect test

Embodiment 1

[0021] combine figure 1 Describe this embodiment, a PNIN-type InGaAs infrared detector with a cut-off wavelength of 2.6 μm, its structure is: sequentially grow on an n-type InP substrate with a thickness of about 1 μm and a doping concentration of 2×10 18 cm -3 n-type InAs 0.60 P 0.40 Buffer layer, continue to grow with a thickness of 3 μm and a doping concentration of 8×10 16 cm -3 n-type In 0.82 Ga 0.18 As absorption layer, regrowth thickness is 100nm, doping concentration is 5×10 17 cm -3 n-type In 0.82 Ga 0.18 As insertion layer, the final growth thickness is 1 μm, and the doping concentration is 2×10 18 cm -3 p-type In 0.82 Al 0.18 As cap layer to form a PNIN detector structure.

[0022] In this example, first, Si-doped InAs is grown on an n-type InP substrate using a MOCVD system using a two-step method. 0.60 P 0.40 Buffer layer, first grow a layer of InAs with a thickness of about 1 μm at a temperature of 450°C 0.60 P 0.40 , and then raise the temperat...

Embodiment 2

[0024] A PNIN-type InGaAs infrared detector with a cut-off wavelength of 2.6 μm, the structure of which is: sequentially grown on an n-type GaAs substrate with a thickness of about 1 μm and a doping concentration of 2×10 18 cm -3 n-type InAs 0.60 P 0.40 Buffer layer, continue to grow with a thickness of 3 μm and a doping concentration of 8×10 16 cm -3 n-type In 0.82 Ga 0.18 As absorption layer, regrowth thickness is 150nm, doping concentration is 5×10 17 cm -3 n-type In 0.82 Ga 0.18 As insertion layer, the final growth thickness is 1 μm, and the doping concentration is 2×10 18 cm -3 p-type In 0.82 Al 0.18 As cap layer to form a PNIN detector structure.

[0025] In this example, first, the MOCVD system is used to grow Si-doped InAs on the n-type GaAs substrate using a two-step method. 0.60 P 0.40 Buffer layer, first grow a layer of InAs with a thickness of about 1 μm at a temperature of 450°C 0.60 P 0.40 , and then raise the temperature to 580°C, during the tem...

Embodiment 3

[0027] A PNIN-type InGaAs infrared detector with a cut-off wavelength of 2.6 μm, the structure of which is: sequentially grown on an n-type InP substrate with a thickness of about 1 μm and a doping concentration of 2×10 18 cm-3 n-type InAs 0.60 P 0.40 Buffer layer, continue to grow with a thickness of 3 μm and a doping concentration of 8×10 16 cm -3 n-type In 0.82 Ga 0.18 As absorption layer, regrowth thickness is 50nm, doping concentration is 5×10 17 cm -3 n-type In 0.82 Ga 0.18 As insertion layer, the final growth thickness is 1 μm, and the doping concentration is 2×10 18 cm -3 p-type In 0.82 Al 0.18 As cap layer to form a PNIN detector structure.

[0028] In this example, first, Si-doped InAs is grown on an n-type InP substrate using a MOCVD system using a two-step method. 0.60 P 0.40 Buffer layer, first grow a layer of InAs with a thickness of about 1 μm at a temperature of 450°C 0.60 P 0.40 , and then raise the temperature to 580°C, during the temperature ...

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Abstract

The invention provides a PNIN type InGaAs infrared detector, which relates to the application field of optoelectronic materials and devices. PNIN type InGaAs infrared detector, the detector is a PNIN type detector structure including substrate, buffer layer, extended wavelength InGaAs absorption layer, n-type insertion layer and cover layer; wherein, the n-type insertion layer The thickness is 50nm-150nm, and its composition is the same as that of the extended wavelength InGaAs absorption layer. The n-type insertion layer added to the infrared detector of the present invention can suppress the transport of carriers by generating band steps, resulting in a decrease in dark current, thereby improving the photoelectric performance of the infrared detector. At the same time, the requirements for the epitaxial growth of InGaAs materials are reduced, and it can work in a wider wavelength range. The infrared detector of the present invention is suitable for backside light input and flip-down packaging structures, and has good versatility.

Description

technical field [0001] The invention relates to the application field of optoelectronic materials and devices, in particular to a PNIN type InGaAs infrared detector. Background technique [0002] At present, in the structural design of InGaAs infrared detectors, especially in semiconductor photovoltaic infrared detectors, the PIN structure is adopted. However, with the rapid development of material preparation technology and device structure design, people are eager to develop new infrared detectors to improve the performance of current optoelectronic devices. Especially for detectors used in space remote sensing, it is urgent to design an infrared detection device structure that can effectively suppress the dark current noise of the device and improve the detection range. [0003] The study found that since the InGaAs material is a full-component direct bandgap material, the application range of the detector can be effectively expanded by increasing the In component. Howe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/101H01L31/105H01L31/0304
CPCH01L31/03042H01L31/101H01L31/105
Inventor 张志伟缪国庆宋航蒋红黎大兵孙晓娟陈一仁李志明
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI