Optical device wafer processing method
一种加工方法、光器件的技术,应用在半导体器件、金属加工设备、半导体/固态器件制造等方向,能够解决降低光器件品质、碎屑飞散、生产效率差等问题,达到生产效率良好的效果
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[0036] Hereinafter, the wafer processing method of the present invention will be described in more detail with reference to the drawings.
[0037] figure 1 (a) and (b) show enlarged perspective views and cross-sectional views of main parts of an optical device wafer divided into individual optical devices by the wafer processing method of the present invention. figure 1 In the optical device wafer 2 shown in (a) and (b), a light emitting layer (epitaxial layer) 21 made of a nitride semiconductor is laminated on the front surface 20a of a sapphire substrate 20 which is a single crystal substrate with a thickness of 300 μm. Further, the light emitting layer (epitaxial layer) 21 is divided by a plurality of dividing lines 22 formed in a grid pattern, and optical devices 23 such as light emitting diodes and laser diodes are formed in the divided regions.
[0038] In order to divide the above-mentioned optical device wafer 2 along the planned dividing line 22, first, a wafer suppo...
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