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Radio frequency LDMOS device and manufacture method

A device and radio frequency technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of large on-resistance, low concentration of drift area, etc., achieve low on-resistance, uniform drift area, and reduce leakage The effect of current

Inactive Publication Date: 2015-02-11
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology

This structure has a lightly doped drift region (LDD) at the drain end or called a drain lightly doped N-type well, so that it has a larger breakdown voltage (BV). However, because the concentration of the drift region 201 is relatively high Light and shallow, so that it has a larger on-resistance (Rdson), and a smaller drift region and epitaxial junction capacitance

Method used

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  • Radio frequency LDMOS device and manufacture method
  • Radio frequency LDMOS device and manufacture method
  • Radio frequency LDMOS device and manufacture method

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Embodiment Construction

[0027] The radio frequency LDMOS device described in the present invention, such as figure 2 As shown, on the P-type substrate 101 is a P-type epitaxy 102, the P-type epitaxy 102 has a P-type body region 301, and the P-type body region 301 has the source region of the LDMOS device and is in contact with the source region heavily doped P-type region 402 .

[0028] The RF P-type epitaxy 102 also has lightly doped drift regions 201 and 202, which are formed by two implants. The first ion implantation forms the lightly doped drift region 201, and the second ion implantation forms the lightly doped drift region 201. impurity drift region 202 . The lightly doped drift region 202 also has a drain 401 of the LDMOS device.

[0029] The silicon surface between the P-type body region 301 and the lightly doped drift region 202 has a gate oxide 103 and a polysilicon gate 104; the silicon surface of the polysilicon gate 104 and the lightly doped drift region 202 close to the polysilicon ...

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Abstract

The invention discloses a radio frequency LDMOS device. The radio frequency LDMOS device is provided with double lightly-doped drift regions, under the condition that quite high breakdown voltage is maintained, has quite low conduction resistance at the same time, and helps to improve the soft breakdown problem of the device. The invention further discloses a manufacture method of the radio frequency LDMOS device. The uniform lightly-doped drift regions can be formed simply by adding a step of deep ion implantation. The method is simple in technical process and easy to implement.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a radio frequency LDMOS device, and also relates to a method for manufacturing the radio frequency LDMOS device. Background technique [0002] With the advent of the 3G era, more and more communication fields require the development of higher power RF devices. RF lateral double diffused field effect transistor (LDMOS: Laterally Diffused Metal Oxide Semiconductor), due to its very high output power, has been widely used in portable wireless base station power amplification as early as the 1990s, and its application frequency is 900MHz~3.8GHz. RF LDMOS has better linearity, higher power and gain than traditional silicon-based bipolar transistors. Today, RF LDMOS is more popular than bipolar, and GaAs devices. [0003] The structure of the current RF LDMOS is as follows figure 1 As shown, the function of the Faraday shielding layer 501 is to reduce the feedback gate-drain capacitan...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/06H01L21/336H01L21/265
CPCH01L21/265H01L29/0852H01L29/66689H01L29/7816
Inventor 慈朋亮李娟娟钱文生肖胜安
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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