LED structure and manufacturing method thereof

Abstract

The invention provides an LED structure and a manufacturing method thereof. A plurality of first graph structures in periodic array configuration are formed in a graphic substrate of the LED structure, the surface of the original substrate is divided into a plurality of areas in periodic array configuration through the first graphic structures, independent light-emitting semiconductor layers are subjected to insulation separation through the graphic substrate during formation, manufacturing of an isolation groove through the lithography etching technology at the chip manufacturing end is omitted, filling of the isolation groove with insulating materials is not needed, first electrodes and second electrodes of independent light-emitting semiconductors are electrically connected as required at same time when the first electrodes and the second electrodes of the independent light-emitting semiconductors are formed, a cascaded structure of an optional number of particles is formed, the independent light-emitting semiconductor layers forming the cascaded structure do not need to be recut, independent packaging of the independent light-emitting semiconductors is subsequentially not needed.

Description

technical field [0001] The invention relates to the field of manufacturing semiconductor photoelectric chips, in particular to an LED structure and a manufacturing method thereof. Background technique [0002] Since its commercialization in the early 1990s, after more than 20 years of development, GaN-based LEDs have been widely used in indoor and outdoor display screens, lighting sources for projection displays, backlight sources, landscape lighting, advertising, traffic instructions, etc. Field, and known as the most competitive new generation of solid-state light source in the 21st century. However, for the semiconductor light-emitting device LED, to replace the traditional light source and enter the high-end lighting field, two factors must be considered: one is to increase the luminous brightness, and the other is to reduce the production cost. [0003] In recent years, various technologies have emerged to improve the brightness of LEDs, such as patterned substrate tec...

AI Technical Summary

Problems solved by technology

However, patterned substrates replace flat-surfaced sapphire substrates as the mainstream original substrates for LED chips, which undoubtedly increases the production cost of LEDs. Although the increased cost will gradually decrease with the improvement of the patterned substrate production technology level, but but cannot completely eliminate

Moreover, the shape of the final LED is not much improved, and the space for further improving the brightness of the LED is limited.

[0004] With the rapid development of semiconductor integration technology, a LED structure called a high-voltage chip has emerged. Generally, after the epitaxial layer is formed, an isolation groove is formed through a photolithography process, and then placed in the isolation groove. Fill the insulating material, and finally make electrodes on each insulating and separated epitaxial layer to form a series structure; although this structure can improve the luminous brightness of the LED, its luminous efficiency does not actually improve, and it greatly increases the manufacturing cost of the chip manufacturing end.

[0005] Therefore, it is urgent to develop a process technology solution that can replace the formation of isolation grooves first, and then fill the isolation grooves with insulating materials, and can greatly improve LED luminous brightness and production costs, so as to solve the problem that the existing process technology solutions have limited brightness improvement space and production cost. Defect problem with high cost

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