Quartz crucible for single crystal growth and preparation method of quartz crucible for single crystal growth

Abstract

The invention discloses a quartz crucible for single crystal growth. The quartz crucible comprises an inner layer and an outer layer, wherein the inner layer is prepared from silicon dioxide particles being 0.5mm-2mm, nano silicon dioxide being smaller than 100nm, the outer layer is prepared from silicon dioxide particles being 0.5mm-2mm, nano silicon dioxide being smaller than 100nm, a stable-phase substance and silicon nitride in proportion; the stable-phase substance is any one of titanium oxide, zirconium oxide, aluminum oxide, titanium nitride, aluminum nitride and zirconium nitride. According to the quartz crucible for single crystal growth and the preparation method of the quartz crucible for single crystal growth disclosed by the invention, the quartz crucible production is divided into inner layer production and outer layer production, wherein the inner layer is made from synthesized quartz, and the particle sizes of the quartz particles including large particles and small particles are controlled; in the outer layer, the quartz strength is controlled by adding a reinforcing phase which is natural silica sand silicon dioxide, and a stable phase. According to a preparation method of the quartz crucible, physical properties such as high strength, good durability and high outer-layer viscosity of the quartz crucible can be provided, and cracking and silicon leakage of the quartz crucible due to high-temperature heating can be prevented.

Description

technical field

[0001] The invention belongs to the field of ceramics, and in particular relates to a quartz crucible for single crystal growth and a preparation method thereof. Background technique

[0002] In recent years, quartz crucibles have gradually developed in the direction of large sizes for energy saving and consumption reduction. Due to the existence of a series of phase transitions in pure quartz, there are changes in the temperature field during single crystal processing, and these changes affect the temperature of the crucible substrate, resulting in local temperature differences. The pulling method is the main process for producing single crystal growth. In production, it is to immerse the seed crystal in the silicon melt contained in the quartz crucible, then rotate the seed crystal rope, move upward slowly, and grow out through the solid-liquid interface. single crystal ingot. A single crystal growth device for pulling method usually includes a quartz cru...

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