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Preparation method of embedded silicon carbide

A silicon carbide and embedded technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problem of large defects in silicon carbide films, and achieve the effect of improving electron mobility and current driving ability

Active Publication Date: 2018-06-26
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The invention provides a method for preparing embedded silicon nitride to solve the problem of relatively large defects in silicon carbide films

Method used

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  • Preparation method of embedded silicon carbide
  • Preparation method of embedded silicon carbide
  • Preparation method of embedded silicon carbide

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Embodiment Construction

[0020] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be noted that all the drawings of the present invention are in simplified form and use inaccurate scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0021] Please refer to Figure 1 to Figure 5 , the preparation method of embedded silicon carbide, comprising:

[0022] First, the substrate on which the semiconductor device is formed is etched to form the groove 2 . Specifically, such as figure 1 As shown, the photoresist 1 is formed on the PMOSFET 10; the NMOSFET 20 on the other side is dry etched to form a groove 2; the photoresist 1 is removed using an acid bath to form a figure 2 device shown.

[0023] Next, the surface of the groove 2 is cle...

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Abstract

The invention discloses a preparation method of intercalated silicon carbide. The method comprises the following steps: etching a substrate which is formed with a semiconductor device in order to form a groove; cleaning the surface of the groove; corroding in-situ the surface of the groove; depositing a seed layer on the surface of the groove through an atomic layer deposition method; and depositing silicon carbide to form the intercalated silicon carbide. Obtaining the silicon substrate surface with low defect and good roughness by the atomic layer deposition contributes to forming the intercalated SiC with low dislocation defect, thereby promoting the electronic mobility of NMOSFET in the premise of ensuring the silicon carbide membrane is low defect, and further increasing the current drive performance thereof.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method for preparing embedded silicon carbide. Background technique [0002] In the semiconductor manufacturing process of 45 nanometers and below, embedded silicon carbide (Embedded SiC) technology improves the electron mobility of NMOSFET by generating uniaxial compressive stress in the channel, thereby improving its current driving capability. The specific principle is: by etching grooves on the Si substrate, the SiC layer is selectively epitaxially grown. Since the SiC lattice constant does not match that of Si, the Si lattice is compressed in the vertical channel direction to generate compressive stress, while along the The Si lattice in the channel direction is stretched to generate tensile stress. [0003] At present, the C content in SiC has a great influence on the embedded silicon carbide technology. This is because the strain (stress) in the SiC film increases with th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/311H01L21/00
CPCH01L21/02529H01L21/205H01L29/66477
Inventor 肖天金
Owner SHANGHAI HUALI MICROELECTRONICS CORP