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Preparation method of crystalline silicon solar cell metal electrode

A technology of solar cells and metal electrodes, which is applied in the field of solar cells, can solve problems such as limited effects, and achieve the effects of low cost, easy implementation, and simple methods

Active Publication Date: 2015-03-04
CSI CELLS CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, those skilled in the art have found experimentally that although the above method has improved the bonding force between the metal electrode and the silicon wafer to a certain extent, its effect is very limited.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] A method for preparing a metal electrode of a crystalline silicon solar cell, comprising the steps of:

[0023] (1) First use light-induced electroplating to plate metal nickel with a thickness of 10 microns on the surface of the silicon wafer;

[0024] (2) Use a laser with a wavelength of 355 to burn the metal nickel on the front to form a silicon-containing nickel seed layer; wherein the laser has a pulse frequency of 200k Hz, a power of 2.0 J / cm2, and a square spot size of 25 microns;

[0025] (3) By direct electroplating, metal copper and palladium are sequentially electroplated on the silicon-containing nickel seed layer to form a metal electrode with a thickness of 25 microns and a width of 30 microns.

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Abstract

The invention discloses a preparation method of a crystalline silicon solar cell metal electrode. The preparation method comprises the steps of (1) forming a metal preformed layer on the surface of a silicon slice at a position for forming the metal electrode by virtue of light induced electroplating, (2) burning the frontage of the metal preformed layer by use of layer to promote the diffusion of silicon into the metal preformed layer, thereby forming a silicon-containing metal seed layer, (3) growing a metal on the silicon-containing metal seed layer by use of a direct electroplating method, thereby forming the metal electrode. Experiments prove that the binding force of the metal electrode obtained by use of the preparation method of the crystalline silicon solar cell metal electrode to the silicon slice is improved by 3 times in contrast with the existing direct electroplating method and unexpected technical effects are achieved; the problems which need to be solved but always not well solved for a long time in the field are solved successfully and a remarkable effect is achieved.

Description

technical field [0001] The invention relates to a method for preparing a metal electrode of a crystalline silicon solar cell, belonging to the technical field of solar cells. Background technique [0002] Conventional fossil fuels are being exhausted day by day. Among the existing sustainable energy sources, solar energy is undoubtedly the cleanest, most common and most potential alternative energy source. Solar power generation devices, also known as solar cells or photovoltaic cells, can directly convert solar energy into electrical energy. The principle of power generation is based on the photovoltaic effect of semiconductor PN junctions. Currently, the challenge in the manufacture of crystalline silicon solar cells is to improve the efficiency of solar cells to increase the power generation per unit area and further reduce the manufacturing cost so that it can be widely used. In crystalline silicon solar cells, the preparation of metal electrodes on silicon wafers is a ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0224
CPCH01L31/022425Y02E10/50Y02P70/50
Inventor 吴坚王栩生
Owner CSI CELLS CO LTD