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A kind of high-purity, aluminum-doped silicon carbide powder and its synthesis method

A synthesis method and technology of silicon carbide powder, applied in the direction of carbon compounds, chemical instruments and methods, inorganic chemistry, etc., to achieve the effects of pollution prevention, high purity, and easy operation

Active Publication Date: 2017-04-12
DEQING ZHOUJING NEW MATERIALS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The object of the present invention is to provide a kind of high-purity, aluminum-doped silicon carbide powder and its synthesis method, thus solve the aforementioned problems existing in the prior art

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  • A kind of high-purity, aluminum-doped silicon carbide powder and its synthesis method
  • A kind of high-purity, aluminum-doped silicon carbide powder and its synthesis method

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preparation example Construction

[0028] Embodiments of the present invention also provide a method for synthesizing high-purity silicon carbide powder, comprising the following steps:

[0029] S1, select carbon powder and silicon powder with a purity of 99.999% and a particle size of less than 50 μm, mix the carbon powder and silicon powder evenly in a molar ratio of 1:1 and pour them into the crucible, seal the crucible and wrap it with carbon insulation material , and then placed in the medium frequency induction heating furnace;

[0030] S2, reducing the air pressure in the growth chamber of the intermediate frequency induction heating furnace to below 0.1Pa;

[0031] S3, turn on the intermediate frequency power supply of the intermediate frequency induction heating furnace, heat the graphite inductor, turn off the intermediate frequency power supply when the temperature measurement point on the lower surface of the graphite inductor reaches 1300-1350°C, stop heating, and when the temperature reaches 1100-...

Embodiment 1

[0040] The embodiment of the present invention provides a kind of synthetic method of high-purity silicon carbide powder, comprises the following steps:

[0041] S1, select carbon powder and silicon powder with a purity of 99.999% and a particle size of less than 50 μm, mix the carbon powder and silicon powder evenly in a molar ratio of 1:1 and pour them into the crucible, seal the crucible and wrap it with carbon insulation material , and then placed in the medium frequency induction heating furnace;

[0042] S2, reducing the air pressure in the growth chamber of the intermediate frequency induction heating furnace to below 0.1Pa;

[0043]S3, turn on the intermediate frequency power supply of the intermediate frequency induction heating furnace, heat the graphite inductor, turn off the intermediate frequency power supply to stop heating when the temperature measurement point on the lower surface of the graphite inductor reaches 1300°C, and turn on argon when the temperature r...

Embodiment 2

[0049] The embodiment of the present invention provides a kind of synthetic method of high-purity silicon carbide powder, comprises the following steps:

[0050] S1, select carbon powder and silicon powder with a purity of 99.999% and a particle size of 300 meshes, mix the carbon powder and silicon powder evenly in a molar ratio of 1:1 and pour them into the crucible, seal the crucible and wrap it with carbon insulation material, Then put it in the medium frequency induction heating furnace;

[0051] S2, reducing the air pressure in the growth chamber of the intermediate frequency induction heating furnace to 0.1Pa;

[0052] S3, turn on the intermediate frequency power supply of the intermediate frequency induction heating furnace, heat the graphite inductor, turn off the intermediate frequency power supply to stop heating when the temperature measurement point on the lower surface of the graphite inductor reaches 1321°C, and turn on argon when the temperature reaches 1114°C ...

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Abstract

The invention discloses high-purity aluminum-doped silicon carbide powder and a synthetic method thereof, and relates to the field of silicon carbide semiconductor materials. The silicon carbide powder is high in purity which reaches 99.999%; the one-time synthetic method is adopted, few processes are required, production equipment is simple, the operation is easy and feasible, and the large-scale production is easy to realize; if the raw material silicon powder adopts aluminum-doped monocrystalline silicon or solar polycrystalline silicon in the method, the recycling of the waste monocrystalline silicon or solar polycrystalline silicon can be facilitated, the environmental pollution can be prevented, and the obtained silicon carbide powder is the aluminum-doped silicon carbide powder and can serve as a raw material for producing colorless transparent silicon carbide crystals or p-type doped silicon carbide crystals.

Description

technical field [0001] The invention relates to the field of silicon carbide semiconductor materials, in particular to a high-purity, aluminum-doped silicon carbide powder and a synthesis method thereof. Background technique [0002] Silicon carbide crystals have broad application prospects in optoelectronic devices such as display, storage, and detection, as well as high-temperature, high-frequency, and high-power electronic devices. As the raw material for crystal growth, silicon carbide powder plays an important role in the growth of semiconductor silicon carbide crystal, and its purity will directly affect the crystal quality and electrical properties of the grown silicon carbide crystal. [0003] At present, the preparation method of silicon carbide powder is mainly the Acheson method, which was proposed by E.G.Acheson in 1893 (U.S.Patent 492,767), by electrically heating the mixture of carbonaceous material and silicon dioxide (Silica) (or aluminum silicate, AluminumSi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/984
Inventor 陈启生高升吉朱钢李汉亮
Owner DEQING ZHOUJING NEW MATERIALS TECH CO LTD