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Installing construction method for semiconductor manufacture procedure gas conveying pipelines

A technology for conveying pipelines and construction methods, applied in pipeline laying and maintenance, pipes/pipe joints/fittings, mechanical equipment, etc., can solve problems such as leakage of exhaust gas, safety accidents, etc., prevent deformation and leakage, ensure welding quality, and improve sealing sexual effect

Active Publication Date: 2015-03-25
成都建工第三建筑工程有限公司 +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

If the gas delivery system leaks during operation or the exhaust gas collection and treatment are not in place, it will cause very serious safety accidents

Method used

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  • Installing construction method for semiconductor manufacture procedure gas conveying pipelines
  • Installing construction method for semiconductor manufacture procedure gas conveying pipelines
  • Installing construction method for semiconductor manufacture procedure gas conveying pipelines

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Experimental program
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Effect test

Embodiment

[0038] like figure 1 As shown, the present invention mainly includes the following steps: construction preparation, clean area setting, pipeline processing, pipeline installation, gas device installation, pipeline and gas device connection, grounding system installation, system performance testing and computer control system debugging. The above steps will be described in detail below.

[0039] (1) Construction preparation

[0040] According to the different characteristics of semiconductor process gases, the corresponding gas cabinets, valve boxes, pipe fittings, and valves must be purchased from designated manufacturers and sealed in packaging. Portable metal spectrometer is used to re-inspect the pipes, pipe fittings, and valves to detect relevant parameters such as strength, airtightness, impurities, and chemical intergranular corrosion. The materials can only be put into construction after passing the inspection. All materials should be packed with double-layer film to ...

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Abstract

The invention discloses an installing construction method for semiconductor manufacture procedure gas conveying pipelines. The installing construction method includes the following steps that (1), a clean region is preset on a construction site, and a clean space is constructed; (2), all apparatuses used for construction are retested and sealed to prevent contamination; (3), the pipeline is cleanly machined in a sealed mode unit by unit in the clean space, and pipe orifices are sealed immediately after machining is completed; (4), the conveying pipeline is installed, protective gas is continuously injected in the pipeline in the installing process and at the operation intervals; (5), the tail gas pipeline is installed according to the structure of a plasma and washing processing system; (6), a gas device is installed, and the pipelines are connected with the gas device in a radial face seal connecting mode; (7), an electrostatic grounding system and an outdoor anti-thunder electric induction grounding system are installed; (8), pressure detection, helium mass spectrum leakage detection, moisture detection, cleanliness detection and oxygen detection are carried out until all results are qualified; (9), a tail gas treatment test is carried out until a test result is qualified.

Description

[0001] technical field [0002] The invention relates to a pipeline installation process, in particular to a method for installing and constructing a semiconductor process gas delivery pipeline. Background technique [0003] High-purity special gases are essential special gases for semiconductor processes such as doping, epitaxy, ion implantation, and etching in electronics factories, such as silane SiH4, AsH3, arsine AsH3, etc., which have high-risk characteristics such as spontaneous combustion, flammability, and toxicity. It is an important raw material for the manufacture of precision electronic components and new energy optoelectronic products. If the gas delivery system leaks during operation or the exhaust gas collection and treatment are not in place, it will cause very serious safety accidents. SiH4 is spontaneously ignitable, as long as it leaks, it will react violently with oxygen in the air and start to burn; AsH3 is highly toxic, any slight leakage may cause ha...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): F16L1/024
CPCF16L1/024
Inventor 胡笳胡刚夏葵崔永祥林吉勇刘成林雪梅
Owner 成都建工第三建筑工程有限公司
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