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Equipment and method of continuously and rapidly preparing graphene under normal pressure

A graphene and atmospheric pressure technology, which is applied in the field of continuous and rapid preparation of graphene, can solve the problems of long graphene preparation cycle, poor economic benefits, and low production efficiency, and achieve the effects of shortening the preparation cycle, convenient operation, and improving production efficiency

Inactive Publication Date: 2015-04-01
CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a kind of equipment and method for continuously and rapidly preparing graphene under normal pressure, which overcomes the defects of long graphene preparation cycle, low production efficiency, complicated process and poor economic benefit

Method used

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  • Equipment and method of continuously and rapidly preparing graphene under normal pressure

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preparation example Construction

[0035] Adopt the following preparation method to complete the preparation of graphene by the equipment of the present invention, comprise the following steps: 1) metal substrate 13 is sent in the described constant temperature annealing chamber 1 by described feeding device, to the inlet pipe of described constant temperature annealing chamber 1 2. Pass in an inert protective gas and a reducing gas to carry out an annealing reaction. After the annealing reaction is completed, the metal substrate 13 is sent into the cooling growth chamber 5 through the feeding device; 2) the air inlet pipe 2 to the cooling growth chamber 5 Feed the reaction gas, and carry out the cooling reaction, during the cooling reaction process, the graphene on the metal substrate 13 nucleates and grows to film formation, and then the metal substrate 13 is sent into the cooling chamber 8 through the feeding device; 3 ) feed inert gas into the cooling chamber 8, reduce the temperature in the cooling chamber ...

Embodiment 1

[0043] The feeding mechanism 15 sends the metal substrate 13 to the conveyor belt 14, and the conveyor belt 14 sends the metal substrate 13 into the reaction chamber 11 in the constant temperature annealing chamber 1. Ar and H at 1000sccm and 200sccm 2 , the pressure in the constant temperature annealing chamber 1 is adjusted to normal pressure through the pressure release gas pipe, the temperature in the constant temperature annealing chamber 1 is 1000° C., and annealed in the reaction chamber 11 for 30 minutes. Open the first valve 17, send the metal substrate 13 into the reaction chamber 11 in the cooling growth chamber 5, and the three air intake pipes 2 of the cooling growth chamber 5 correspond to Ar and H with flow rates of 500 sccm, 200 sccm, and 10 sccm respectively. 2 、CH 4 , the pressure in the cooling growth chamber 5 is adjusted to normal pressure through the pressure release air pipe, the temperature of the metal substrate 13 copper foil is dropped from 1000°C t...

Embodiment 2

[0045] The feeding mechanism 15 sends the metal substrate 13 to the conveyor belt 14, and the conveyor belt 14 sends the metal substrate 13 into the reaction chamber 11 in the constant temperature annealing chamber 1. Ar and H at 1000sccm and 200sccm 2 , the pressure in the constant temperature annealing chamber 1 is adjusted to normal pressure through the pressure release gas pipe, the temperature in the constant temperature annealing chamber 1 is 900° C., and after annealing in the reaction chamber 11 for 60 minutes. Open the first valve 17, send the metal substrate 13 into the reaction chamber 11 in the cooling growth chamber 5, and the three air intake pipes 2 of the cooling growth chamber 5 correspond to Ar and H with flow rates of 500 sccm, 200 sccm, and 10 sccm respectively. 2 、CH 4 , the pressure in the cooling growth chamber 5 is adjusted to normal pressure through the pressure release air pipe, the copper foil of the metal substrate 13 drops the temperature from 100...

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Abstract

The invention relates to equipment and a method of continuously and rapidly preparing graphene under a normal pressure. The equipment comprises a box, a constant-temperature annealing cavity, a cooling growth cavity and a cooling cavity, wherein the box is separated into the constant-temperature annealing cavity, the cooling growth cavity and the cooling cavity; a gas intake tube, a gas mixing chamber and a reaction cavity are arranged in the constant-temperature annealing cavity and the cooling growth cavity respectively; the gas intake tube stretches in the gas mixing chamber; the gas mixing chamber is communicated with the reaction cavity; a cooling device is arranged in the cooling cavity; a feeding device and a cold gas tube are further arranged in the box; the feeding device penetrates through the reaction cavities and the cooling devices of the constant-temperature annealing cavity and the cooling growth cavity; the constant-temperature annealing cavity, the cooling growth cavity and the cooling cavity are provided with pressure release tubes. The method comprises the following steps: conveying a metal substrate in the constant-temperature annealing cavity and annealing at first; then conveying the metal substrate in the cooling growth cavity and reacting to grow graphene; finally conveying graphene in the cooling cavity and cooling. The equipment and method have the beneficial effects that preparation cycle is short, the equipment is simple in structure and convenient in operation, production efficiency is increased, and high economic benefits are achieved.

Description

technical field [0001] The invention relates to the field of graphene production and manufacturing, in particular to a device and method for continuously and rapidly preparing graphene under normal pressure. Background technique [0002] Graphene is a hexagonal honeycomb structure composed of carbon atoms based on sp2 hybridization, a two-dimensional crystal with a thickness of only one atomic layer. In 2004, Andre Geim, Konstantin Novoselov and others discovered stable single-layer graphene, and also won the 2010 Nobel Prize in Physics for their pioneering work on graphene. In recent years, graphene has shown many exciting properties and potential application prospects in the fields of microelectronics, quantum physics, materials, chemistry, etc., and has attracted extensive attention from the scientific and industrial circles. Graphene has excellent mechanical, thermal, optical, electrical and other properties. The electron mobility of graphene at room temperature exceed...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04
Inventor 高翾黄德萍李占成张永娜朱鹏姜浩史浩飞杜春雷
Owner CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI
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