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SOI power device with medium layer fixed charges

A fixed charge, power device technology, applied in electrical components, semiconductor devices, circuits, etc.

Inactive Publication Date: 2015-04-08
GUILIN UNIV OF ELECTRONIC TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

4. The vertical withstand voltage is not affected by the thickness of the buried oxide layer of the device, and the thickness of the buried oxide layer can be reduced to solve the self-heating problem of SOI power devices

Method used

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  • SOI power device with medium layer fixed charges
  • SOI power device with medium layer fixed charges
  • SOI power device with medium layer fixed charges

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Experimental program
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Embodiment Construction

[0022] The present invention will be further described in detail through specific embodiments and related applications below.

[0023] An SOI power device with a fixed charge in a dielectric layer, comprising a substrate layer 10, an active layer 6, and an insulating dielectric buried layer 9 between the substrate layer and the active layer, where the insulating dielectric buried layer 9 is in contact with the active layer 6 A high-concentration fixed-charge region 11 is set in the side area of ​​the surface, and the area of ​​the high-concentration fixed-charge region 11 accounts for 50%-75% of the surface area of ​​the insulating dielectric buried layer in contact with the active layer. The high-concentration fixed-charge region 11 charges The concentration is 1×10 17 ~1×10 18 / cm 2 .

[0024] The charges injected into the high-concentration fixed charge region can be positive ions of potassium, sodium, boron or silicon. After testing, the devices made by injecting the ab...

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Abstract

The invention discloses an SOI power device with medium layer fixed charges. The SOI power device comprises a substrate layer, an active layer and an insulating medium buried layer located between the substrate layer and the active layer. A high-concentration fixed charge area is disposed in the edge area of the contact surface of the insulating medium buried layer and the active layer. The area of the high-concentration fixed charge area accounts for 50-75% of the area of the contact surface of the insulating medium buried layer and the active layer. The concentration of the high-concentration fixed charge area is 1*10<17>-1*10<18> / cm<2>. The SOI power device is simple in process, large in fixed charge doping concentration process allowance, small in influence by high-temperature processes, and completely compatible with a conventional CMOS / SOI process. In addition, the voltage resistance of the power device is increased greatly by an enhanced medium buried layer electric field.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to an SOI power device with fixed charges in a dielectric layer. Background technique [0002] For conventional SOI devices, the design of the vertical withstand voltage is mainly improved by increasing the thickness of the insulating dielectric layer. However, as the thickness of the insulating layer increases, the thermal conductivity of the device will deteriorate, which will easily cause the self-heating effect of the device to burn the device, and due to the limitation of Gauss' theorem, Si0 2 The withstand voltage capability of the insulating layer has not been fully utilized. [0003] In order to improve the vertical withstand voltage of SOI power devices with thin insulating layers, scholars have proposed a series of device structure schemes. Some literature (A.Nakagawa, N.Yasuhara, Y.Baba.Breakdown Voltage Enhancement for Devices on Thin Silicon Layer / Silico...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L29/08
CPCH01L29/7824H01L29/36
Inventor 朱辉李琦徐晓宁
Owner GUILIN UNIV OF ELECTRONIC TECH
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