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SOI substrate and method of forming SOI substrate

A substrate, silicon substrate technology, applied in electrical components, electrical solid devices, circuits, etc., can solve the problems of low heat conduction efficiency, device saturation drive current drop, application limitations of SOI technology, etc., achieve good heat dissipation performance, solve self-heating Problems, the effect of promoting heat transfer

Inactive Publication Date: 2018-10-19
NINGBO SEMICON INT CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The conventional SOI structure uses silicon oxide as the insulating buried oxide layer, and its heat conduction efficiency is low, which will cause the power device based on this structure to produce a self-heating effect, resulting in a decrease in the saturation drive current of the device, transconductance distortion and negative differential of carriers. Mobility and other effects make the application of SOI technology subject to certain restrictions

Method used

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  • SOI substrate and method of forming SOI substrate
  • SOI substrate and method of forming SOI substrate

Examples

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Embodiment 1

[0060] refer to figure 2 , the method for forming the SOI substrate in this embodiment includes:

[0061] Step a: providing a first silicon substrate 11 , and forming a first dielectric layer 12 on the upper surface of the first silicon substrate 11 .

[0062] In this embodiment, the first dielectric layer 12 is a silicon oxide insulating layer formed by thermally oxidizing the upper surface of the first silicon substrate 11 .

[0063] Step b: forming at least one groove 13 with an open top in the first dielectric layer 12 , and the thickness of the first dielectric layer 12 at the bottom of the groove is greater than or equal to zero and less than a set value.

[0064]In this embodiment, at least one groove 13 with an opening at the top is formed in the first dielectric layer 12 by the following method: using photolithography to define the shape and size of the groove, and dry etching from the top of the first dielectric layer 12 Etching is started, and the etching is stop...

Embodiment 2

[0077] The present invention also provides an SOI substrate, referring to figure 2 f, SOI substrate includes bottom silicon 11, buried oxide layer 12 on bottom silicon 11, top layer silicon 21 on buried oxide layer 12, buried oxide layer 12 includes at least one groove 13 with an open top, buried oxide layer at the bottom of the groove The thickness is greater than or equal to zero and less than a set value; the groove 13 is filled with insulating and heat-conducting materials.

[0078] By introducing a thermally conductive material with a higher thermal conductivity than the buried oxide layer 12 into the buried oxide layer 12, the heat conduction of the buried oxide layer is promoted, the self-heating problem of the SOI structure is solved, and the heat dissipation performance of the SOI structure is improved.

[0079] The insulating and heat-conducting material is preferably an AlN material with good insulating ability and good heat dissipation ability.

[0080] When the ...

Embodiment 3

[0085] Figure 7 It is a flowchart of a method for forming an SOI substrate according to a third embodiment of the present invention. The difference between this method and the method of the first embodiment is that the thermally conductive material filled in step c is a non-insulating thermally conductive material, and In step d, an insulating and heat-conducting layer 14 is formed on the upper surface of the first dielectric layer 12 .

[0086] Graphene powder or graphite film can be deposited in the tank 13 by one of PVD, CVD, and solution methods.

[0087] Before forming the AlN thin film, it is preferable to perform CMP polishing on the first dielectric layer 12 so as to obtain a high-quality AlN thin film.

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Abstract

The invention discloses an SOI substrate and a method of forming an SOI substrate. The SOI substrate comprises a bottom silicon unit, a buried oxide layer arranged on the bottom silicon unit, and a top silicon unit arranged on the buried oxide layer. The buried oxide layer includes at least one trench with an opened top, wherein the thickness of the buried oxide layer at the bottom of the trench is larger than or equal to zero and is less than a set value. The trench is filled with a heat conductive material; and the heat conductive material is insulated from the top silicon unit. According tothe invention, with introduction of the conductive material with high thermal conductivity in the buried oxide layer, the heat conduction of the buried oxide layer is promoted; a self-heating problemof the SOI structure is solved; and thus the SOI substrate has better heat dissipation performance.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing technology, and more specifically, to an SOI substrate and a method for forming the SOI substrate. Background technique [0002] The SOI structure can be a double layer of an insulating substrate plus a top monocrystalline silicon layer, or a sandwich structure with a thin insulating layer as the middle layer. During device fabrication, only the top thin silicon layer is used as the device fabrication layer, that is, structures such as source, drain, and channel regions are formed. The substrate only plays a supporting role, and the buried device fabrication layer in the sandwich structure is electrically isolated from the substrate, thereby reducing the influence of the substrate on device performance. [0003] In the prior art, the SOI substrate is usually prepared by using a Smartcut process that combines the dual advantages of ion implantation and bonding. The steps are as fi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/373H01L21/762
CPCH01L21/76202H01L23/373H01L23/3733
Inventor 陈达罗海龙李伟叶菲张俊龙
Owner NINGBO SEMICON INT CORP
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