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Method of variable temperature growth of InAs/GaSb superlattice infrared detector GaSb buffer layer on silicon substrate

An infrared detector, infrared detection technology, applied in semiconductor devices, sustainable manufacturing/processing, electrical components, etc., can solve problems affecting device function, lattice mismatch, etc., to improve the quality of epitaxial layers, reduce defect density, The effect of broad application prospects and technical advantages

Active Publication Date: 2015-04-15
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the serious lattice mismatch between the silicon substrate and the type II superlattice material, a large number of defects and dislocations are introduced, which seriously affects the device function.

Method used

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  • Method of variable temperature growth of InAs/GaSb superlattice infrared detector GaSb buffer layer on silicon substrate

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Embodiment 1

[0028] This embodiment provides a method for variable temperature growth of InAs / GaSb superlattice GaSb buffer layer on a silicon substrate, comprising the following steps:

[0029] Step 1: Take a substrate 10, and the material of the substrate 10 is silicon.

[0030] Step 2: growing an AlSb thin layer 11 on the substrate 10 by molecular beam epitaxy. The thickness of the thin layer is 1.5-5nm, and the growth temperature is 500-580°C. The main purpose is to maximize the alleviation of the lattice mismatch between the substrate and the GaSb buffer layer, and form a transition layer, which can greatly reduce the dislocations and defects of the next material growth, and improve the material quality.

[0031] Step 3: growing a GaSb thin layer 12 on the AlSb thin layer 11 at low temperature, the thin layer thickness is 5-10 nm, and the growth temperature is 450-500°C. Since the lattice constants of AlSb and GaSb are similar, the lattice mismatch is small, which is beneficial to r...

Embodiment 2

[0040] This embodiment provides a method for variable temperature growth of InAs / GaSb superlattice GaSb buffer layer on a silicon substrate, comprising the following steps:

[0041] Step 1: Take a silicon substrate 10;

[0042] Step 2: growing an AlSb thin layer 11 on the substrate with a growth temperature of 540° C. and a thickness of 3.6 nm.

[0043] Step 3: On the AlSb thin layer 11, the GaSb thin layer 12 is first grown at low temperature, the growth temperature is 480° C., and the thickness is 8 nm. The purpose of this low-temperature growth GaSb thin layer is to prevent dislocations between the GaSb buffer layer 13 and the AlSb thin layer 11 and the substrate 10 due to lattice mismatch, reduce the dislocation density in the material of the GaSb buffer layer 13, and improve buffering. The crystal quality of the layer material.

[0044] Step 4: Pause for 8 minutes, and adjust the temperature to the next growth temperature.

[0045] Step 5: growing a GaSb buffer layer 1...

Embodiment 3

[0049] This embodiment provides a method for variable temperature growth of InAs / GaSb superlattice GaSb buffer layer on a silicon substrate, comprising the following steps:

[0050] Step 1: Take a silicon substrate 10;

[0051] Step 2: growing an AlSb thin layer 11 on the substrate with a growth temperature of 520° C. and a thickness of 3 nm.

[0052] Step 3: On the AlSb thin layer 11, the GaSb thin layer 12 is first grown at low temperature, the growth temperature is 460° C., and the thickness is 6 nm. The purpose of this low-temperature growth GaSb thin layer is to prevent dislocations between the GaSb buffer layer 13 and the AlSb thin layer 11 and the substrate 10 due to lattice mismatch, reduce the dislocation density in the material of the GaSb buffer layer 13, and improve buffering. The crystal quality of the layer material.

[0053] Step 4: Pause for 10 minutes, and adjust the temperature to the next growth temperature.

[0054] Step 5: growing a GaSb buffer layer 13...

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Abstract

A method of variable temperature growth of an InAs / GaSb superlattice infrared detector GaSb buffer layer on a silicon substrate particularly comprises the following steps of: Step 1, taking a substrate; Step 2, growing a thin AlSb layer on the substrate; Step 3, growing a thin GaSb layer on the thin AlSb layer at low temperature; Step 4, stopping for 5-10min; Step 5, growing a GaSb buffer layer on the thin GaSb layer at high temperature; Step 6, growing an epitaxial layer on the GaSb buffer layer; and Step 7, cooling a material after growth to accomplish the preparation of growing the infrared detection material GaSb buffer layer on the silicon substrate. According to the method, the thin GaSb layer is grown at the lower temperature, dislocation between the epitaxial layer and the substrate due to lattice mismatch can be effectively limited, the defect density of the GaSb buffer layer growing at the high temperature is reduced, the quality of the epitaxial layer is improved, and the method has broad application prospects and technical advantages.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials and devices, and relates to a method for growing a GaSb buffer layer, in particular to a method for growing an InAs / GaSb superlattice GaSb buffer layer on a silicon substrate with varying temperatures. Background technique [0002] In 1977, the InAs / GaSb superlattice was first proposed for infrared detection. Because this kind of superlattice is different from the I superlattice represented by GaAs / AlGaAs, the conduction band of the InAs material is between the valence band of the GaSb material. In this case, the energy band structures are staggered from each other, and the energy band structure can be adjusted by adjusting the thickness of the InAs / GaSb layer and its corresponding composition, which has attracted extensive attention. InAs / GaSb superlattice, as the most promising material system of the third-generation infrared detector, makes the infrared detector with military as...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCH01L31/101H01L31/1852Y02P70/50
Inventor 彭瑞芹矫淑杰李洪涛赵连城
Owner HARBIN INST OF TECH
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