LED open circuit protection integrated chip based on diode chain and manufacturing method thereof
An open-circuit protection and integrated chip technology, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as uneven performance, small reverse withstand voltage of LEDs, and complex circuits, so as to improve conduction performance, Ensure stability and enhance the effect of on-current
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Embodiment 1
[0046] Example 1 An integrated chip for LED open circuit protection based on diode chain
[0047] This embodiment is a diode chain-based LED open circuit protection integrated chip, such as figure 1 , figure 2 , image 3 As shown, the LED open-circuit protection integrated chip 1 based on a diode chain includes a forward diode chain formed by forward series connection of several diodes 2 with the same structure, and also includes an antiparallel diode connected in reverse parallel with the forward diode chain, The two ends of the forward diode chain are used as two metal electrodes of the LED open-circuit protection integrated chip 1 based on the diode chain, that is, the chip anode 25 and the chip cathode 26 . The conduction voltage of the forward diode chain and the breakdown voltage of the anti-parallel diode in the diode chain-based LED open circuit protection integrated chip 1 are greater than the protected LED conduction voltage and less than the output voltage of t...
Embodiment 2
[0050] Example 2 A method of manufacturing an LED open circuit protection integrated chip based on a diode chain
[0051] This embodiment provides a method for manufacturing an LED open circuit protection integrated chip in Embodiment 1, including the following steps:
[0052] (1) Manufacturing a wafer containing several LED open-circuit protection integrated chips based on diode chains on a silicon wafer;
[0053] Wafer fabrication includes the following steps:
[0054] 1) if Figure 4 As shown, several N-well active regions 20 with a certain junction depth are formed on the prepared P-type substrate 10 by diffusion or ion implantation of N-type impurities;
[0055] 2) On the basis of the above process, the top layer is oxidized and lithographically etched into the P+ active region window, and the P+ active region 22 is formed by diffusion or ion implantation of P-type impurities, such as Figure 5 shown;
[0056] 3) Oxidize the photolithographic N+ active region window...
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