Distortion and noise cancellation based high-linearity CMOS broadband low noise amplifier
A broadband low-noise and noise-cancelling technology, applied in the direction of improving amplifiers to reduce noise impact and improving amplifiers to reduce nonlinear distortion, etc., can solve problems such as limited Q value, can not meet narrowband matching well, and achieve power consumption Low cost, convenient wireless multi-interface connection, and the effect of reducing costs
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[0056] This embodiment adopts Figure 4 The circuit structure shown is based on the CHRT 0.18μm RFCMOS 1P6M process, and is simulated using the Cadence SpectreRF tool. The power supply voltage VDD is 1.8V, and the working frequency range is 0.1-1.6GHz.
[0057] For a standard RF system of 50Ω, the input impedance of the CMOS broadband low-noise amplifier LNA should satisfy (gm1a+gm1b)=20ms. Compared with a single NMOS common-gate stage, this structure can save nearly half of the bias current.
[0058] use Figure 5 The bias circuit biases M2 and M3 at 0.55V and 0.6V, respectively. Resistors R1 and R2 take values of 500Ω and 480Ω respectively. For the convenience of S22 test, the resistance R3 is 50Ω.
[0059] Image 6 The simulation result diagram of S parameters is given, where S11, S12 and S22 represent the input reflection coefficient, reverse transmission coefficient and output reflection coefficient respectively. From the simulation results, it has good input match...
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