Sputtering target for forming transparent oxide film and manufacturing method thereof

A technology of transparent oxide and manufacturing method, which is applied in optical recording/reproduction, sputtering coating, optical record carrier manufacturing, etc., and can solve problems such as inability to implement sputtering, frequent occurrence, and abnormal discharge

Active Publication Date: 2017-02-22
MITSUBISHI MATERIALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the case of using a sputtering target containing such composite oxide particles, if a film is formed by direct current sputtering, there is a problem that plasma is not generated due to abnormal discharge, and sputtering cannot be performed, or There is a problem that film formation is affected by frequent abnormal discharges
In addition, in Al as a raw material powder 2 o 3 Powder or Ga 2 o 3 When the compounding amount of the powder is large, if direct current (DC) sputtering is performed using the zinc oxide-based sputtering target manufactured above, there is a problem of frequent occurrence of abnormal discharge

Method used

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  • Sputtering target for forming transparent oxide film and manufacturing method thereof
  • Sputtering target for forming transparent oxide film and manufacturing method thereof
  • Sputtering target for forming transparent oxide film and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment

[0052] In the first example, when producing a sputtering target for forming a transparent oxide film, first, raw material powders of zinc oxide powder and silicon oxide powder are fired to produce a calcination body composed of a composite oxide of Zn and Si , and pulverize the calcined body to obtain a composite oxide powder of Zn and Si. Next, the obtained composite oxide powder of Zn and Si, zinc oxide powder, and a mixed powder of one or both of aluminum oxide powder and gallium oxide powder are molded and then fired to obtain a fired body. It is machined to produce a sputtering target. About this manufacture, it will describe in detail below.

[0053] 1) A case where a mixed powder of Zn and Si composite oxide powder, zinc oxide powder, and alumina powder is used will be described.

[0054] First, zinc oxide (chemical formula: ZnO, D 50 =1μm), silicon oxide (chemical formula: SiO 2 ,D 50 =2.0μm) each raw material powder to become ZnO:SiO 2 =2:1 (molar ratio) mode is...

no. 2 Embodiment

[0104] In the above-mentioned first embodiment, when manufacturing a sputtering target for forming a transparent oxide film, first, a mixture of zinc oxide (ZnO) powder and silicon oxide (SiO 2 ) The raw material powder of the powder is fired and then pulverized and fired, and is composed of a composite oxide of Zn and Si (Zn 2 SiO 4 ) composed of a calcined body, and pulverize the calcined body to obtain a composite oxide of Zn and Si (Zn 2 SiO 4 )powder. Second, in the obtained Zn 2 SiO 4 powder, ZnO powder, and alumina (Al 2 o 3 ) powder and gallium oxide (Ga 2 o 3 ) powders or mixed powders of two kinds of powders are molded and fired to obtain a fired body, and the fired body is machined to manufacture a sputtering target.

[0105] In the second example, in the manufacturing method of the above-mentioned sputtering target for forming a transparent oxide film, as shown in Table 4, the flexural strength and thermal conductivity related to the fired body of the mold...

no. 3 Embodiment

[0132] In the manufacturing method of the sputtering target for forming a transparent oxide film according to the above-mentioned first embodiment, pre-fired ZnO powder and SiO 2 Powder Zn and Si composite oxide (Zn 2 SiO 4 ) as the raw material powder, the mixed powder of the raw material composition shown in Table 1 was fired, but in the third embodiment, the production process of the calcined body was omitted, and Zn 2 SiO 4 powder, while using a large amount of ZnO powder and SiO 2 powder as raw material powder. In the manufacturing method of the sputtering target for forming a transparent oxide film according to the third embodiment described above, SiO 2 Powder, Al 2 o 3 Powder and ZnO powder are used as raw material powders. ZnO powder and SiO in raw powder 2 powder, the ZnO powder and SiO powder with the particle size shown in Table 6 are used 2 powder. In addition, as shown in Table 6, the firing temperature and firing retention time, which affect the flexur...

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Abstract

Provided is a sputtering target for forming a zinc oxide-based transparent oxide film, which is capable of forming a transparent oxide film by direct current sputtering, while being free from the occurrence of abnormal discharge. This sputtering target for forming a transparent oxide film is characterized by being a fired body of a composition that contains 0.6-8.0 at% of Al and / or Ga and 0.1 at% or more of Si so that the total of Al, Ga and Si is 33.0 at% or less relative to the total amount of all the metal elements, with the balance made up of Zn and unavoidable impurities. This sputtering target for forming a transparent oxide film is also characterized in that complex oxide particles of Zn and Si, which have particle diameters of 5 mum or less, are present in the fired body.

Description

technical field [0001] In particular, the present invention relates to a light-transmitting protective film suitable for optical discs, and electronic paper or solar cells used in touch panel components, liquid crystal display components or electroluminescent display components, electrophoretic display components, toner display components, etc. A sputtering target for forming a zinc oxide-based transparent oxide film that can be used in a gas barrier layer, etc., and a method for producing the same. [0002] This application claims priority based on Patent Application No. 2012-178802 filed in Japan on August 10, 2012 and Patent Application No. 2013-150310 filed in Japan on July 19, 2013, the contents of which are incorporated in this application . Background technique [0003] Conventionally, there are known techniques for producing a zinc oxide-based transparent oxide film by a sputtering method as a light-transmitting protective film suitable for an optical disc, and for ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34C04B35/16C04B35/453G11B7/26
CPCC23C14/3414C04B35/453C04B35/645C04B2235/3217C04B2235/3286C04B2235/3418C04B2235/3427C04B2235/5436C04B2235/5445C04B2235/763C04B2235/786C04B2235/80C23C14/086G11B7/254G11B7/266G11B2007/25411G11B2007/25414G11B2007/25417
Inventor 斋藤淳张守斌山口刚近藤佑一
Owner MITSUBISHI MATERIALS CORP
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