Chemical mechanical polishing solution
A chemical mechanical and polishing liquid technology, applied in the field of polishing liquid, can solve the problems of long processing cycle and low polishing rate, and achieve the effect of reducing roughness, increasing polishing rate and efficient polishing treatment
Inactive Publication Date: 2015-04-29
SHANGHAI XINANNA ELECTRONICS TECH +1
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Problems solved by technology
[0004] The object of the present invention is to provide a kind of chemical mechanical polishing liquid, be used for overcoming the problem that the chemical mechanical polishing liquid applied to sapphire in the prior art has low polishing rate and long processing cycle
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Embodiment 1
[0053] Example 1 A 2-inch C-directed sapphire substrate was polished on a Speedfam 36GPAW polishing machine for about 2 hours. Fix 96 pieces of 2-inch C-oriented sapphire substrates on the ceramic plate by means of a back mold, the rotating speed of the large plate is 60 revolutions, and the speed is 400g / cm 2 Unit pressure, using a SUBA polishing pad (its groove is 2.0cm*2.0cm), the polishing liquid used in polishing is 5wt% colloidal SiO 2 , 55-65nm, 1wt% EDTA, adjust the pH value to 9.0 with sodium hydroxide. After being polished by the polishing liquid, the surface quality of the sapphire substrate has no scratches and the roughness is significantly reduced. Example 1 shows that adding an aminocarboxylate chelating agent can obtain better surface quality and lower surface roughness, which can meet the requirements of downstream manufacturers for sapphire substrates.
[0054] The experimental results of application example 2 and example 3 show that when adding the same ki...
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Abstract
The invention discloses a chemical mechanical polishing solution. The chemical mechanical polishing solution comprises the following raw materials by weight percentage according to the total mass of the chemical mechanical polishing solution : 0.1-50 wt% of an inorganic grinding agent, 0.01-5 wt% of an ammonia carboxy chelating agent and the balance of a pH adjusting agent and water. The chemical mechanical polishing solution has the benefits that by adopting the chemical mechanical polishing solution, the polishing rate can be remarkably improved, and the polishing rate is at least 1.5 times of that of the chemical mechanical polishing solution in the prior art; when the chemical mechanical polishing solution is applied to a sapphire substrate, the surface of a substrate material is free of scratches, and the roughness is remarkably reduced; the efficient polishing treatment on a sapphire material can be realized, so that the industrial production of sapphire substrates and diaphragms can be realized.
Description
technical field [0001] The invention relates to a polishing liquid, in particular to a chemical mechanical polishing liquid for sapphire polishing wafers. Background technique [0002] Sapphire, also known as white gem, is composed of α-A1 2 o 3 , transparent, has the same optical and mechanical properties as natural gemstones, has good thermal properties, excellent electrical and dielectric properties, and chemical corrosion resistance, high infrared transmittance, good wear resistance, hardness Second only to diamond, it has a Da Mok's grade of 9. It still has good stability at high temperatures. Its melting point is 2030 ° C. It is widely used in industry, national defense, scientific research, civil and other fields. Infrared windows, semiconductor chip substrates, light-emitting diode substrates, precision wear-resistant bearings and other high-tech parts manufacturing materials. Sapphire is difficult to machine due to its high hardness and brittleness. In particula...
Claims
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IPC IPC(8): C09G1/02H01L21/304
CPCC09G1/02
Inventor 刘卫丽侯蕾
Owner SHANGHAI XINANNA ELECTRONICS TECH