Machining method for target material

A technology of mechanical processing and target material, which is applied in the direction of metal material coating process, ion implantation plating, coating, etc., can solve the problems of affecting the quality of target material, serious deformation of target material, scrapping of target material, etc.

Active Publication Date: 2015-04-29
KONFOONG MATERIALS INTERNATIONAL CO LTD
View PDF4 Cites 21 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

During the machining process of these large-sized and thin-thick target blanks, the side effects of internal stress release and torsion are particularly obvious, and the deformation of the target is particularly serious, which directly affects the quality of the target, and even causes target damage. The material is scrapped and cannot be used

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Machining method for target material
  • Machining method for target material
  • Machining method for target material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] As mentioned in the background technology, in the target preparation process, it is necessary to perform a correction process of machining the sputtering surface, the back surface and the surrounding sides of the target blank, so as to improve the flatness and parallelism of the target, so that the size of the target is the same as The structure of the magnetron sputtering equipment is matched, so that the quality of the magnetron sputtering coating can be improved during the magnetron sputtering process.

[0039]However, in mechanical processing, when the target is subjected to the cutting force of the tool, in order to prevent it from deforming, an internal stress that opposes it is generated inside the material. These two forces are equal in magnitude and opposite in direction. This kind of balance, when the target is subjected to the cutting force of the tool disappears after the processing is completed, the internal balance of the target is broken, and the internal ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
diameteraaaaaaaaaa
diameteraaaaaaaaaa
Login to view more

Abstract

The invention relates to a machining method for a target material. The machining method for the target material comprises the following processing steps: levelling planes of a sputtering surface and the back face of a target material blank, and processing each side face of the target material blank so that thickness of the target material blank is the same as the predetermined thickness, and plane dimensions of the sputtering surface and back face of the target material blank are the same as the predetermined plane dimensions, wherein the levelling treatment process on the sputtering surface and back face of the target material blank comprises a primary plane levelling process and a secondary plane levelling process which are carried out on the sputtering surface and back face of the target material blank along the first direction and a finish machining plane levelling process carried out on the sputtering surface. By adopting the technical scheme, a multi-step levelling process is carried out on the sputtering surface or back face along the first direction, stress produced inside the target material and vibration produced to the target material by machining in a machining process can be effectively alleviated, so that the defects of deformation and the like can not be formed on the target material blank, quality of a machined target material is improved, and yield of the machined target materials is increased.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a machining method for a target. Background technique [0002] Magnetron sputtering is a substrate coating process that uses charged particles to bombard the target, so that the target atoms escape from the surface and are evenly deposited on the substrate. Magnetron sputtering has become the most excellent substrate coating process due to its advantages of high sputtering rate, low substrate temperature rise, good film-substrate bonding force, and excellent metal coating uniformity and strong controllability. It is widely used in the coating process of electronic and information industries such as integrated circuits, information storage, liquid crystal display, laser memory, electronic control devices, etc. [0003] With the rapid development of the electronic information industry, such as in the manufacturing process of integrated circuits, the size of the chip subs...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/00C23C14/35
Inventor 姚力军相原俊夫大岩一彦潘杰王学泽范文新
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap