Coplanar electrode analog photodetector chip and manufacturing method thereof
A photodetector and coplanar electrode technology, which is applied in the field of optical communication, can solve the problems of poor repeatability, difficult surface passivation, and high production cost
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[0027] The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
[0028] see Figure 1 to Figure 3 , the present invention provides a coplanar electrode analog photodetector chip, comprising: an epitaxial wafer 20 and an ohmic contact layer 10 formed on the back of the epitaxial wafer 20 . The epitaxial wafer 20 includes: a substrate 1, a buffer layer 2 formed on the substrate 1, an absorption layer 3 formed on the buffer layer 2, a transition layer 4 formed on the absorption layer 3, The top layer 5 formed on the transition layer 4, the passivation layer 6 formed on the top layer 5, the doped photosensitive region 30 formed on the absorption layer 3, the transition layer 4 and the top layer 5, formed on the The limiting trench 40 in the absorption layer 3, the transition layer 4, the top layer 5 and the passivation layer 6, the antireflection transition film layer 8 formed on the doped photosensitive area 3...
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