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New technology for preparing cadmium-free buffer layer in CIGS thin film solar cell based on solution method

A technology of solar cells and buffer layers, applied in the field of solar cells

Inactive Publication Date: 2015-04-29
SUZHOU RUISHENG SOLAR ENERGY TECH
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  • New technology for preparing cadmium-free buffer layer in CIGS thin film solar cell based on solution method

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[0017] The above description is only an overview of the technical solution of the present invention. In order to make the purpose, technical solution and advantages of the present invention clearer, the following in conjunction with specific examples are specifically described as follows:

[0018] 1. Prepare the precursor solution. put high purity In 2 S 3 Materials and sulfur powder (all higher than 99.9% in purity) were added to anhydrous hydrazine solvent and stirred to dissolve it. In solution 2 S 3 The molar concentration of sulfur is 0.01-1M, the molar concentration of sulfur is 0-5M, and the actual molar concentration in the solution is determined according to the actual needs of the coating method adopted.

[0019] 2. Preparation of buffer layer In by solution coating method 2 S 3 1. Coating the prepared precursor solution onto the substrate on which the back electrode and the absorbing layer have been deposited, the coating methods include spray coating / spin coa...

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Abstract

The invention discloses a new technology for preparing a cadmium-free buffer layer in a CIGS thin film solar cell based on a solution method. The CIGS thin film solar cell has various advantages, thereby having the greatest development potential. In the CIGS preparation process, toxic CdS is usually used as a buffer layer, and the environment can be polluted easily. According to the new technology, a simple solution coating method is used to prepare an In2S3 thin film to serve as a buffer layer. Firstly, In2S3 powder and powdered sulfur are jointly dissolved in hydrazine solvent; secondly, solution is coated on a CIGS absorbing layer through a solution coating method such as spraying or spinning or blade coating or roller coating; thirdly, a compact In2S3 buffer layer can be obtained through heating and annealing; finally, the efficient CIGS thin film solar cell can be obtained. The preparation technology has the advantages of being free of cadmium, low in cost, easy to control, efficient and suitable for industrial production.

Description

technical field [0001] The invention belongs to the field of solar cells and relates to a copper indium gallium selenide (CIGS for short) thin film solar cell device. Background technique [0002] All energy comes from energy, and human life is inseparable from energy. After entering the 21st century, the energy resources that can be exploited by the current technology of human beings will face the crisis of serious shortage, especially the fossil fuel resources such as coal, oil and natural gas are becoming increasingly depleted, and they can only last for a few decades. Therefore, it is necessary to find sustainable alternative new energy sources. In addition, the use of fossil fuels such as coal, oil and natural gas will also bring a series of environmental problems: the global greenhouse effect makes the global temperature rise and the sea level rises; air pollution; drought, desertification; exhaust gas, waste , A large amount of waste liquid is discharged, causing se...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCH01L31/0749H01L31/1844Y02E10/541Y02E10/544Y02P70/50
Inventor 刘德昂谢承智钱磊
Owner SUZHOU RUISHENG SOLAR ENERGY TECH