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ANISOTROPIC CONDUCTIVE FILM and SEMICONDUCTOR DEVICE using same

An anisotropic, conductive film technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve problems such as reduced adhesion, reduced film pre-compression properties, and fracture of anisotropic conductive films. Effects of securing bonding force, securing shape stability, and improving connection reliability

Active Publication Date: 2015-05-06
KUKDO ADVANCED MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At this time, if the external stress applied to the anisotropic conductive film exceeds the allowable maximum stress, the anisotropic conductive film cannot relieve the internal stress and cracks occur, resulting in a decrease in properties such as adhesion and fracture of the anisotropic conductive film
In addition, when pre-compression is performed at reduced pressure, there is a problem that the film is stretched and the pre-compression properties of the film are reduced

Method used

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  • ANISOTROPIC CONDUCTIVE FILM and SEMICONDUCTOR DEVICE using same
  • ANISOTROPIC CONDUCTIVE FILM and SEMICONDUCTOR DEVICE using same
  • ANISOTROPIC CONDUCTIVE FILM and SEMICONDUCTOR DEVICE using same

Examples

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Effect test

preparation example Construction

[0149] The method of preparing the anisotropic conductive film according to the embodiment of the present invention is not particularly limited, and any specific method known in the art can be used without limitation.

[0150] No special equipment or equipment is required to form an anisotropic conductive film. For example, the anisotropic conductive film can be prepared by: dissolving the binder resin in an organic solvent; adding other components to the binder resin; stirring the components for a predetermined period of time; coating the mixture To the release film to an appropriate thickness, for example, 10 to 50 microns; and drying the mixture for a time sufficient to volatilize the organic solvent, thereby providing an anisotropic conductive film with a single layer structure.

[0151] Here, any typical organic solvent can be used without limitation. In this embodiment, the foregoing procedure is repeated two or more times to provide an anisotropic conductive film having a m...

example 1

[0178] Preparation of the first insulating layer composition

[0179] Using a C mixer, 30% by weight of the first binder resin (Mitsubishi Co., Ltd., product name: E1256), 23% by weight of the first epoxy resin (Adike, product name: EP-4000S) and 30% by weight of the second epoxy resin (Idico, product name: EP-4010S) was mixed and stirred for 5 minutes. Next, after adding 5 wt% of a cationic curing agent (Sanxin Chemical Co., Ltd., product name: SI-60L) to the mixture, 7 nanometer silica (Degussa, product name: R812) and silane coupling (Shin-Etsu Co., Ltd., product name: KBM403) was further added to the mixture, followed by stirring with a C mixer for 1 minute (so that the temperature of the mixture did not exceed 60° C.) to form the first insulating layer composition.

[0180] Preparation of conductive layer composition

[0181] The conductive layer composition was prepared in the same manner as the preparation of the first insulating layer composition, except that the binder res...

example 2

[0188] The anisotropic conductive film was prepared in the same manner as in Example 1 by adjusting the amounts of the corresponding components in the second insulating layer as listed in Table 1.

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Abstract

Provided is a semiconductor device, including an anisotropic conductive film connecting the semiconductor device, the anisotropic conductive film having a maximum stress of 0.4 kgf / mm2 or more; and a stress-strain curve having a slope (A) of greater than 0 and less than or equal to 0.2 kgf / (mm2·%) as represented by the following equation 1: slope(A)=(½Smax−S0) / x  (1), wherein: Smax=maximum stress, x=strain (%) at half (½) of the maximum stress, and S0=stress at a strain of 0.

Description

Technical field [0001] The present invention relates to an anisotropic conductive film and a semiconductor device using the anisotropic conductive film. Background technique [0002] In general, an anisotropic conductive film (ACF) refers to a film-like adhesive prepared by dispersing conductive particles in a resin such as epoxy resin. The anisotropic conductive film is composed of a polymer layer having electrical anisotropy and adhesive force, and exhibits conductive properties in the thickness direction of the film, and exhibits insulating properties in the surface direction of the film. [0003] When the anisotropic conductive film is placed between circuit boards and thermally compressed under certain conditions, the circuit terminals of the circuit board are electrically connected to each other via conductive particles, and the insulating layer fills the space between adjacent circuit terminals to The conductive particles are isolated from each other to provide high insulat...

Claims

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Application Information

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IPC IPC(8): C09J7/00C09J163/00C09J171/12C09J11/04C09J9/02H01B5/14
CPCH01L2924/15788H01L2224/271H01L2224/2939H01L2224/29455H01L2224/29439H01L24/13H01L24/16H01L24/27H01L24/32H01L24/81H01L24/83H05K3/323H01L2224/13023H01L2224/16148H01L2224/16238H01L2224/2919H01L2224/2929H01L2224/293H01L2224/29339H01L2224/29344H01L2224/29347H01L2224/29355H01L2224/29387H01L2224/32145H01L2224/32225H01L2224/81193H01L2224/83101H01L2224/83204H01L2224/83851H01L2224/83862H01L2924/07811H01L2224/27003H01L2224/29444H01L2224/81903H01L24/29H01L2224/29083H01L2924/00H01L2924/0665H01L2924/053H01L2924/05442H01L2924/00014H01L2924/014H01L2924/00012C09J7/29B32B27/08C09J9/02C09J2203/326H01L2021/60022H01L2021/60015C09J2301/16C09J2301/314C09J2301/312C09J163/00
Inventor 金智软姜炅求朴憬修孙秉勤申颍株郑光珍黄慈英
Owner KUKDO ADVANCED MATERIALS CO LTD
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