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Gallium ion source and materials therefore

A technology of gallium ions and ion beams, applied in the field of ion sources, can solve problems such as difficult ion sources for solid gallium targets

Active Publication Date: 2015-05-06
VARIAN SEMICON EQUIP ASSOC INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this may not be suitable for systems requiring high current density in a relatively large area
In the case of solid targets, solid gallium targets are not easily used as ion sources due to the low melting temperature of the elemental metals

Method used

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  • Gallium ion source and materials therefore
  • Gallium ion source and materials therefore
  • Gallium ion source and materials therefore

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Embodiment Construction

[0018] Embodiments of the present invention provide an improved source of gallium ions. In various embodiments, the improved source may include a novel combination of a solid gallium compound target of a plasma-based source and an ambient gas species, such as an indirectly heated cathode , IHC) ion source. This embodiment can be used, for example, in ion implantation systems, including beamline ion implantation systems in which gallium ions are extracted from an ion source and directed toward a target material provided. Particular embodiments refer to target / gas combinations for indirect heating of cathode sources or other plasma-type ion sources employing solid targets.

[0019] Although gallium ions have been used in focused ion beam technology, due to the above reasons, the development of high current and high throughput gallium ion sources has lagged behind. In one example of a high current application, gallium can be used as an acceptor-type (p-type) dopant for a group...

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PUM

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Abstract

In one embodiment, a method for generating an ion beam having gallium ions includes providing at least a portion of a gallium compound target in a plasma chamber, the gallium compound target comprising gallium and at least one additional element. The method also includes initiating a plasma in the plasma chamber using at least one gaseous species and providing a source of gaseous etchant species to react with the gallium compound target to form a volatile gallium species.

Description

technical field [0001] The invention relates to an ion source, and in particular to a material system and device for generating gallium (Ga) ions related to semiconductor manufacturing. Background technique [0002] Processing techniques, such as ion implantation, provide the ability to process substrates using multiple species. In ion implantation systems, a variety of ion sources are available including solid, liquid, and gas-based ion sources. For many ionic species, a variety of gaseous precursors can be used as sources of materials for processing substrates. However, for some ion species, the absence of gaseous precursors, or the presence of gaseous precursors results in low beam currents. For those ion species that lack effective gaseous precursors, liquid and / or powder precursors may be available, but these precursors require the use of a vaporizer to generate gaseous species for the ion source, And extract ions from this ion source. [0003] Another way to achiev...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J27/08H01J37/08
CPCH01J27/20H01J37/08H01J37/02H01J37/3171Y10S438/919H01J7/24
Inventor 科斯特尔·拜洛奎格·钱尼奈尔·巴森班杰明·科伦贝亚努丹尼斯·P·罗迪尔
Owner VARIAN SEMICON EQUIP ASSOC INC