Supercharge Your Innovation With Domain-Expert AI Agents!

High depth-to-width ratio super-resolution nano photoetching structure and method

A high-aspect-ratio, nano-lithography technology, which is applied in microlithography exposure equipment, photolithography exposure equipment, etc., can solve the problems of complex, expensive, and complex equipment for oblique incidence of light beams

Inactive Publication Date: 2015-05-13
HENAN POLYTECHNIC UNIV
View PDF5 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Although the above method can realize super-resolution nanolithographic patterns with high aspect ratio, for optical systems with high numerical aperture, the corresponding equipment is complex and expensive.
At the same time, it is more complicated to realize the oblique incidence of two symmetrical beams

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High depth-to-width ratio super-resolution nano photoetching structure and method
  • High depth-to-width ratio super-resolution nano photoetching structure and method
  • High depth-to-width ratio super-resolution nano photoetching structure and method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] The present invention will be further described below in conjunction with accompanying drawing and embodiment:

[0034] Such as figure 1 As shown, the high aspect ratio super-resolution nanolithography structure sequentially includes a transparent upper substrate layer 1, a metal grating layer 2, a photoresist layer 3, a gain medium layer 4, a metal thin film layer 5 and a lower substrate layer 6. The metal grating layer 2, the photoresist layer, the gain medium layer and the metal thin film layer together constitute a four-layer metal waveguide resonant cavity structure based on surface plasmons;

[0035] SiO 2 The formed upper base layer 1. The metal grating layer 2 is made of Cr, the underlying metal film layer 5 is made of Al, and the gain medium layer 4 is made of GaN. The incident P polarized light is vertically incident from top to bottom, the wavelength is 365nm, SiO 2 The refractive indices of photoresist and GaN are 1.4745, 1.7 and 2.6538, respectively, an...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a nano photoetching structure and method, and particularly relates to a high depth-to-width ratio super-resolution nano photoetching structure. The high depth-to-width ratio super-resolution nano photoetching structure comprises a transparent upper substrate layer, a metal grating layer, a photoresist layer, a gain medium layer, a metal film layer and a lower substrate layer, wherein the metal grating layer, the photoresist layer, the gain medium layer and the metal film layer collectively form a four-layer metal waveguide resonance cavity structure based on surface plasmas. According to the high depth-to-width ratio super-resolution nano photoetching structure, the metal waveguide structure consists of four layers of metal waveguides such as the metal grating layer, the photoresist layer, the gain medium layer and the metal film layer, and the depth-to-width ratio of generated nano patterns breaks through an existing surface plasma photoetching technology. Compared with a traditional photoetching method based on the surface plasmas, the depth-to-width ratio of generated nano photoetched stripes is greatly increased, and the resolution and the depth-to-width ratio of the nano patterns can be adjusted by adjusting materials and the thickness of a gain medium.

Description

technical field [0001] The invention relates to a nano-lithography structure and method, in particular to a high aspect ratio super-resolution nano-lithography structure and method. Background technique [0002] With the continuous development of microelectronics and semiconductor industries, it is particularly important to obtain high-resolution, high-quality photolithography technology for nano-patterns. Since traditional optical imaging and microfabrication technologies are limited by the diffraction limit, using the superdiffraction properties of surface plasmon waves (SPWs) will provide a potential technical approach to obtain subwavelength and even smaller nanometer-sized structures. . A notable feature of SPWs is that its wavelength is much smaller than that of light waves at the same frequency, and at the same time it has the singular optical properties of near-field enhancement effect, which can effectively overcome the shortcomings of evanescent wave weak field an...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F7/20
Inventor 张书霞杨学峰王耿李明刘振深
Owner HENAN POLYTECHNIC UNIV
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More