A kind of SOI lateral constant current diode and its manufacturing method

A constant current diode, horizontal technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as poor constant current capability, low breakdown voltage, high pinch-off voltage of constant current diodes, and achieve a steep linear region , increase the current density, improve the effect of constant current capability

Active Publication Date: 2018-04-06
HANGZHOU SILICON-MAGIC SEMICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Aiming at the problems of high pinch-off voltage, low breakdown voltage and poor constant current capability of constant current diodes, the present invention proposes a SOI lateral constant current diode and its manufacturing method

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  • A kind of SOI lateral constant current diode and its manufacturing method
  • A kind of SOI lateral constant current diode and its manufacturing method
  • A kind of SOI lateral constant current diode and its manufacturing method

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Embodiment

[0053] In this implementation, an SOI lateral constant current diode with a withstand voltage of 200V and a current of about 2.5E-6A / μm is taken as an example to describe the technical solution of the present invention in detail.

[0054] With the help of TSUPREM4 and MEDICI simulation software provided such as figure 2 The SOI lateral constant current diode cell structure shown in (b) is used for process simulation. The simulation parameters are: the initial silicon wafer thickness is about 50 μm, and the substrate concentration is 8E14cm -3 ; The thickness of the buried oxide layer is 3 μm; the concentration of N-type lightly doped silicon on the insulating layer is 8E14cm -3 ; P-type heavily doped region implant dose is 4E15cm -2 , the implantation energy is 60keV, and the push-in time is 60 minutes; the implantation dose in the N-type heavily doped region is 4E15cm -2 , the implantation energy is 60keV; the implantation dose of the P-type doped region is 4E11cm -2 , th...

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Abstract

The invention provides an SOI lateral constant current diode and a manufacturing method thereof, belonging to the technical field of semiconductor power devices. The SOI lateral constant current diode is formed by interdigitated connection of multiple cells with the same structure, and the cells include a substrate, a buried oxide layer, an N-type lightly doped silicon, a P-type heavily doped region, and an N-type heavily impurity region, oxide dielectric layer, metal cathode, metal anode, P-type doped region; the P-type heavily doped region is located between the N-type heavily doped region and the P-type doped region, and the P-type heavily doped region and the N-type The heavily doped region is in ohmic contact with the metal cathode, the P-type doped region is in ohmic contact with the metal anode, and the N-type lightly doped silicon between the P-type heavily doped region and the N-type heavily doped region passes through the oxide dielectric layer and the metal cathode isolation. The invention adopts SOI technology, which can effectively prevent the adverse effects brought by the substrate leakage current in the integrated system; at the same time, it adopts double-carrier conduction, which increases the current density of the device, makes the linear region of the device steeper, and the pinch-off voltage is in the Within 5V.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, and in particular relates to an SOI lateral constant current diode and a manufacturing method thereof. Background technique [0002] The constant current source is a commonly used electronic equipment and device, and it is widely used in electronic circuits. The constant current source is used to protect the entire circuit, even if the voltage is unstable or the load resistance changes greatly, it can ensure the stability of the supply current. A constant current diode (CRD, Current Regulative Diode) is a semiconductor constant current device, that is, a diode is used as a constant current source instead of an ordinary constant current source composed of transistors, Zener tubes and resistors. Currently, constant current diodes The output current is between a few milliamps and tens of milliamperes, which can directly drive the load, achieving the purpose of simple circuit str...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/861H01L29/06H01L21/329
Inventor 乔明于亮亮代刚何逸涛张波
Owner HANGZHOU SILICON-MAGIC SEMICON TECH CO LTD
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