Organic light emission diode and preparation method thereof
An electroluminescence device and luminescence technology, which is applied in the direction of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of large driving current and low luminous efficiency
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Embodiment 1
[0071] like figure 1 As shown, the structure of the organic electroluminescent device of this embodiment is: glass / ITO / NPB / Ir(piq) 2 (acac):CBP(10:100) / Bphen / BEDT-TTF:NTCDA(1:100) / CoO 2 / CeO 2 / m-MTDATA / Ir(piq) 2 (acac):CBP(10:100) / Bphen / Mg-Al, wherein the colon ":" indicates that the former is doped into the latter.
[0072] The preparation method of the organic electroluminescent device of this embodiment includes the following steps:
[0073] A glass is provided as the substrate 10, which is cleaned and dried for later use.
[0074] A layer of ITO conductive film, ie, the anode layer 20, is prepared on one surface of the substrate 10. After completion and cleaning, the sheet resistance of the anode layer 20 is 5Ω / □.
[0075] A layer of the first organic electroluminescence unit 30 is prepared on the surface of the anode layer 20 by vacuum evaporation technology:
[0076] 1 x 10 in vacuum -5 In the vacuum coating system of Pa, a first hole transport layer 301 with a t...
Embodiment 2
[0089] like figure 1 As shown, the structure of the organic electroluminescent device of this embodiment is: glass / IZO / MeO-TPD / DCJTB:Alq 3 (5:100) / TPBi / Pyronin B:NTCDA(10:100) / Ta 2 O 5 / V 2 O 5 / MeO-TPD / DCJTB:Alq 3 (5:100) / TPBi / Al, where a colon ":" indicates that the former is doped into the latter.
[0090] The preparation method of the organic electroluminescent device of this embodiment includes the following steps:
[0091] A glass is provided as the substrate 10, which is cleaned and dried for later use.
[0092] A layer of IZO conductive film, ie, the anode layer 20, is prepared on one surface of the substrate 10. After completion and cleaning, the sheet resistance of the anode layer 20 is 100Ω / □.
[0093] A layer of the first organic electroluminescence unit 30 is prepared on the surface of the anode layer 20 by vacuum evaporation technology:
[0094] 1 x 10 in vacuum -3 In the vacuum coating system of Pa, a first hole transport layer 301 with a thickness of 4...
Embodiment 3
[0107] like figure 1 As shown, the structure of the organic electroluminescent device of this embodiment is: glass / ITO / TPD / FIrpic:CBP(15:100) / BCP / BEDT-TTF:NTCDA(5:100) / CoO 2 / SnO 2 / NPB / DMQA / BPhen / Ag, where a colon ":" indicates that the former is doped into the latter.
[0108] The preparation method of the organic electroluminescent device of this embodiment includes the following steps:
[0109] A glass is provided as the substrate 10, which is cleaned and dried for later use.
[0110] A layer of ITO conductive film, ie, the anode layer 20, is prepared on one surface of the substrate 10. After completion and cleaning, the sheet resistance of the anode layer 20 is 50Ω / □.
[0111] A layer of the first organic electroluminescence unit 30 is prepared on the surface of the anode layer 20 by vacuum evaporation technology:
[0112] 1 x 10 in vacuum -4 In the vacuum coating system of Pa, a first hole transport layer 301 with a thickness of 50 nm is prepared on the surface of t...
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