Organic light emission diode and preparation method thereof
An electroluminescent device, electroluminescent technology
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Embodiment 1
[0068] Such as figure 1 As shown, the structure of the organic electroluminescent device of the present embodiment is: glass / ITO / NPB / Ir(MDQ) 2 (acac):NPB(10:100) / Bphen / TRZ 4 / ReO 3 / TRZ 4 / m-MTDATA / FIr 6 :CBP(15:100) / Bphen / Mg-Al, wherein the colon ":" indicates that the former is doped in the latter.
[0069] The preparation method of the organic electroluminescence device of this embodiment comprises the following steps:
[0070] A glass is provided as the substrate 10, which is washed and dried for future use.
[0071] Prepare a layer of ITO conductive thin film on one surface of the substrate 10, that is, the anode layer 20, and clean it after completion. The sheet resistance of the anode layer 20 is 5Ω / □.
[0072] Prepare a layer of the first organic electroluminescent unit 30 on the surface of the anode layer 20 by vacuum evaporation technology:
[0073] In a vacuum of 1×10 -5 In the vacuum coating system of Pa, a first hole transport layer 301 with a thickness of...
Embodiment 2
[0087] Such as figure 1 As shown, the structure of the organic electroluminescent device of the present embodiment is: glass / IZO / MeO-TPD / DCJTB:Alq 3 (5:100) / TPBi / p-TPAm-NTAZ / MoO 3 / p-TPAm-NTAZ / MeO-TPD / DPVBi / TPBi / Al, where the colon ":" indicates that the former is doped in the latter.
[0088] The preparation method of the organic electroluminescence device of this embodiment comprises the following steps:
[0089] A glass is provided as the substrate 10, which is washed and dried for future use.
[0090] Prepare a layer of IZO conductive film on one surface of the substrate 10, that is, the anode layer 20, and clean it after completion. The square resistance of the anode layer 20 is 100Ω / □.
[0091] Prepare a layer of the first organic electroluminescent unit 30 on the surface of the anode layer 20 by vacuum evaporation technology:
[0092] In a vacuum of 1×10 -3 In the vacuum coating system of Pa, a first hole transport layer 301 with a thickness of 20nm is prepared on ...
Embodiment 3
[0106] Such as figure 1 As shown, the structure of the organic electroluminescent device of the present embodiment is: glass / ITO / TPD / FIrpic:CBP(15:100) / BCP / CzOXD / V 2 o 5 / CzOXD / NPB / DMQA / BPhen / Ag, where the colon ":" indicates that the former is doped in the latter.
[0107] The preparation method of the organic electroluminescence device of this embodiment comprises the following steps:
[0108] A glass is provided as the substrate 10, which is washed and dried for future use.
[0109] Prepare a layer of ITO conductive thin film on one surface of the substrate 10, that is, the anode layer 20, and clean it after completion. The sheet resistance of the anode layer 20 is 50Ω / □.
[0110] Prepare a layer of the first organic electroluminescent unit 30 on the surface of the anode layer 20 by vacuum evaporation technology:
[0111] In a vacuum of 1×10 -4 In the vacuum coating system of Pa, a first hole transport layer 301 with a thickness of 50nm is prepared on the surface of th...
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Abstract
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