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Fin field effect transistor and method of forming the same

A fin-type field effect and transistor technology, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., to achieve the effects of avoiding deterioration of isolation effect, improving performance, and controlling etching rate

Active Publication Date: 2017-09-22
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The carrier mobility of the channel region of the fin field effect transistor needs to be further improved

Method used

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  • Fin field effect transistor and method of forming the same
  • Fin field effect transistor and method of forming the same
  • Fin field effect transistor and method of forming the same

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Experimental program
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Effect test

Embodiment Construction

[0031] As mentioned in the background, the carrier mobility of the channel region of the prior art FinFET needs to be further improved, so as to improve the performance of the FinFET.

[0032] Improving the carrier mobility of the channel region of the transistor can be achieved by applying stress to the channel region, for example, applying tensile stress to the channel region of the NMOS transistor can increase the electron flow rate in the channel region of the NMOS transistor. mobility; applying compressive stress to the channel region of the PMOS transistor can increase the mobility of holes in the channel region of the PMOS transistor.

[0033] The channel region of the transistor can be stressed by forming a stressed source and drain. For fin field effect transistors, after removing the fins on both sides of the gate structure by etching, epitaxially form stress materials as source and drain, which requires more process time and cost; The stress layer is epitaxially fo...

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PUM

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Abstract

A Fin Field Effect Transistor and its forming method, the forming method of the Fin Field Effect Transistor includes: providing a semiconductor substrate; forming a fin on the semiconductor substrate; forming a first fin on the surface of the semiconductor substrate A dielectric layer, the surface of the first dielectric layer is lower than the top surface of the fin; a dummy gate structure across the fin is formed on the first dielectric layer; fins on both sides of the dummy gate structure performing oxidation treatment on the surface to form an oxide layer on the surface of the fins on both sides of the dummy gate structure; removing the oxide layer to reduce the height and width of the fins on both sides of the dummy gate structure to form a first part of the fins; A stress layer is formed on the surface of the first part of the fin. The above method can improve the carrier mobility of the fin field effect transistor and reduce the difficulty of manufacturing process.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a fin field effect transistor and a forming method thereof. Background technique [0002] With the continuous development of semiconductor process technology, the process node is gradually reduced, and the gate-last (gate-last) process has been widely used to obtain an ideal threshold voltage and improve device performance. However, when the feature size of the device is further reduced, even if the gate-last process is adopted, the structure of the conventional MOS field effect transistor can no longer meet the requirements for device performance. Fin field effect transistor (Fin FET) is obtained as a multi-gate device. received widespread attention. [0003] Fin field effect transistor is a common multi-gate device, figure 1 A schematic diagram of a three-dimensional structure of a fin field effect transistor in the prior art is shown. [0004] Such as figure 1 As sh...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L29/78H01L29/10
Inventor 谢欣云
Owner SEMICON MFG INT (SHANGHAI) CORP
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