Fabrication method of silicon-based ultraviolet enhanced photodiode
A technology of photodiodes and manufacturing methods, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of high purchase price and dependence on foreign imports, and achieve the effect of low cost and simple process
Active Publication Date: 2016-06-29
THE 44TH INST OF CHINA ELECTRONICS TECH GROUP CORP
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Problems solved by technology
At present, there are a few foreign manufacturers of silicon-based UV-enhanced photodiodes for the 190nm-360nm ultraviolet band, such as Hamamatsu Corporation in Japan and FirstSensor in Germany. The demand for high-performance silicon-based UV-enhanced photodiodes basically depends on foreign imports. Not only is the purchase price high, but it is also subject to human
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[0027] A method for manufacturing a silicon-based ultraviolet enhanced photodiode, the innovation of which is that the steps of the method are:
[0028] 1) N-type silicon epitaxial material is used as the substrate, including the substrate layer 4 and the epitaxial layer 1, wherein the resistivity of the substrate layer 4 is less than 0.001Ω·cm; the resistivity of the epitaxial layer 1 is 20Ω·cm~500Ω·cm, the thickness 20 μm to 100 μm; the device end face on the side where the epitaxial layer 1 is located is marked as the front side, and the device end face on the side where the substrate layer 4 is located is marked as the back side;
[0029] 2) using a high temperature oxidation process to form a silicon dioxide passivation layer 5 on the surface of the device;
[0030] 3) Photolithography is used to photoetch the guard ring doped area on the front of the device, and a wet etching process is used to etch the oxide layer within the range of the guard ring doped area;
[0031]...
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Abstract
The invention discloses a manufacturing method of a silicon-based ultraviolet intensified photodiode. According to the manufacturing method of the silicon-based ultraviolet intensified photodiode, the silicon-based ultraviolet intensified photodiode is manufactured through a relatively simple process and achieves device performance about the same to that of imported products. The manufacturing method of the silicon-based ultraviolet intensified photodiode has the advantage that the silicon-based ultraviolet intensified photodiode is manufactured through new technology, is almost identical to the imported products in device performance and meanwhile is simple in process and low in cost.
Description
technical field [0001] The invention relates to a photodetector manufacturing process, in particular to a silicon-based ultraviolet enhanced photodiode manufacturing method. Background technique [0002] Silicon-based PIN photodiodes have good temperature performance, low dark current, high response speed, insensitivity to magnetic field and good spectral response characteristics, stable and reliable, and cheap. They have been widely used in photoelectric detection, optical fiber communication, Laser ranging and other fields. The spectral response range of ordinary silicon-based photodiodes is from 400nm to 1100nm, and there is no obvious photoresponse to the ultraviolet band from 190nm to 360nm. The ultraviolet band photodetector can be widely used in nuclear physics, health physics, geological prospecting, astronomy, nuclear medicine, environmental protection and other fields. It is necessary to extend the spectral response range of silicon-based photodiodes to the ultrav...
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IPC IPC(8): H01L31/18
CPCH01L31/18
Inventor 黄烈云王昊璇钟奇志向勇军韩恒利
Owner THE 44TH INST OF CHINA ELECTRONICS TECH GROUP CORP