Method for prolonging service life of quantum dot LED

A quantum dot light-emitting and diode technology, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as hindering the commercial application of QD-LED, limiting the life of QD-LED devices, and unable to effectively suppress fluorescent flickering. The ability to resist photobleaching, suppress fluorescence scintillation, and improve lifespan

Active Publication Date: 2015-06-10
HENAN UNIVERSITY
View PDF4 Cites 17 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In previous literature reports, the assembly of QD-LEDs usually uses quantum dots with a shell thickness of less than 3 nm (we call such quantum dots "thin-shell" quantum dots), although the fluorescence quantum yield of such quantum dots It can reach 60% or even 100%, and the luminous efficiency of this type of QD-LED is already close to the level of organic light-emitting diodes (OLEDs), but "thin-shell" quantum

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for prolonging service life of quantum dot LED
  • Method for prolonging service life of quantum dot LED
  • Method for prolonging service life of quantum dot LED

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] A method for improving the lifespan of a quantum dot light-emitting diode, the quantum dot used as a light-emitting layer has a shell-to-core volume ratio of 62:1. The specific preparation method is as follows:

[0021] Use the ITO glass of the cleaned pattern painting with an ultraviolet-ozone treatment machine (UV / O 3 ) for 15 minutes, and then a 30 nm PEDOT:PSS film was spin-coated on an ITO glass substrate at a speed of 5500 rpm as a hole injection layer by the method of spin coating. The ITO glass substrate with spin-coated PEDOT:PSS film was dried in air at 150°C for 15 min, and then transferred to a glove box to spin-coat a 40 nm TFB chlorobenzene solution with a mass concentration of 1.5 wt% as a hole transport layer. , and dried in a glove box at 110°C for 30min. Continue to spin-coat blue "giant shell" quantum dots ZnCdSe / ZnS with a concentration of 18mg / mL (thickness about 37nm) as the light-emitting layer, and then prepare a zinc oxide (ZnO) electron trans...

Embodiment 2

[0025] A method for improving the lifespan of a quantum dot light-emitting diode, the quantum dot used as a light-emitting layer has a shell-to-core volume ratio of 64:1. The specific preparation method is as follows:

[0026] Use the ITO glass of the cleaned pattern painting with an ultraviolet-ozone treatment machine (UV / O 3) for 15 minutes, and then a 30 nm PEDOT:PSS film was spin-coated on an ITO glass substrate at a speed of 5500 rpm as a hole injection layer by the method of spin coating. The ITO glass substrate with spin-coated PEDOT:PSS film was dried in air at 150°C for 15 min, and then transferred to a glove box to spin-coat a 40 nm TFB chlorobenzene solution with a mass concentration of 1.5 wt% as a hole transport layer. , and dried in a glove box at 110°C for 30min. Continue to spin-coat green "giant-shell" quantum dots ZnCdSe / ZnSe / ZnS (thickness about 37nm) with a concentration of 18mg / mL as the light-emitting layer, and then prepare a zinc oxide (ZnO) electron ...

Embodiment 3

[0030] A method for improving the lifespan of a quantum dot light-emitting diode, the quantum dot used as a light-emitting layer has a shell-to-core volume ratio of 72:1. The specific preparation method is as follows:

[0031] Use the ITO glass of the cleaned pattern painting with an ultraviolet-ozone treatment machine (UV / O 3 ) for 15 minutes, and then a 30 nm PEDOT:PSS film was spin-coated on an ITO glass substrate at a speed of 5500 rpm as a hole injection layer by the method of spin coating. The ITO glass substrate with spin-coated PEDOT:PSS film was dried in air at 150°C for 15 min, and then transferred to a glove box to spin-coat a 40 nm TFB chlorobenzene solution with a mass concentration of 1.5 wt% as a hole transport layer. , and dried in a glove box at 110°C for 30min. Continue to spin-coat red "giant-shell" quantum dots CdSe / ZnCdS / ZnS (thickness about 37nm) with a concentration of 15mg / mL as the light-emitting layer, and then prepare a zinc oxide (ZnO) electron tr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Particle sizeaaaaaaaaaa
Particle sizeaaaaaaaaaa
Login to view more

Abstract

The invention belongs to the field of electroluminescent cells, and relates to a method for prolonging the service life of a quantum dot LED. The method is that the volume ratio of a shell to a kernel of a quantum dot used as a lighting layer is more than 60: 1; the shell and the kernel of the quantum dot selected are both manufactured from materials in the II-VI cluster, and the materials can be CdSe/ ZnS, CdSe/ ZnCdS/ ZnS, CdSe/ CdS, ZnCdSe/ ZnS or ZnCdSe/ ZnSe/ ZnS; the shell layer can be formed by compounding ZnCdS and ZnS, or ZnSe and ZnS. According to the method, the quantum dot with huge shell is used as the lighting layer, so that the fluorescent blinking of the quantum dot can be effectively inhibited, and the photobleaching resistance can be improved; the service life of the electroluminescent cell of which the lighting layer is a semiconductor fluorescent quantum dot can be effectively improved.

Description

technical field [0001] The invention belongs to the field of electroluminescent devices, and relates to a new method for improving the luminous performance and lifespan of quantum dot light-emitting devices by using "giant-shell" quantum dots as light-emitting layers. Background technique [0002] Semiconductor fluorescent quantum dots have good characteristics of high quantum yield, good monochromaticity, and adjustable color with size. These characteristics make light-emitting diodes (QD-LEDs) with quantum dots as the light-emitting layer attract more and more attention in the fields of solid-state lighting and flat panel display. In previous literature reports, the assembly of QD-LEDs usually uses quantum dots with a shell thickness of less than 3 nm (we call such quantum dots "thin-shell" quantum dots), although the fluorescence quantum yield of such quantum dots It can reach 60% or even 100%, and the luminous efficiency of this type of QD-LED is already close to the le...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L33/06H01L33/28H01L33/00
CPCH01L33/00H01L33/06H01L33/28H01L2933/0008
Inventor 申怀彬吝青丽李林松
Owner HENAN UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap