Wide-strip-shaped semiconductor laser cavity mode selecting method

Abstract

The invention relates to a wide-strip-shaped semiconductor laser cavity mode selecting method, belongs to the technical field of laser and aims to solve the problem that the beam quality of a wide-strip-shaped large-power semiconductor laser cannot be effectively improved and the application of the wide-strip-shaped large-power semiconductor laser is limited in the prior art. The method is characterized in that a volume grating outer cavity method is used, the inner cavity transverse mode of a wide-strip-shaped large-power semiconductor laser chip which is subjected to fast axis collimation is selected through the narrow-angle beam feedback of the high-reflection volume grating of grating plane normal inclination, and an annular mode in double-peak far field distribution is allowed to receive effective outer cavity feedback; due to the fact that one of the far field peaks is limited by the high-reflection output of the volume grating, single-peak far field lasing is achieved, and the beam quality of the wide-strip-shaped large-power semiconductor laser is improved. The method is applicable to the manufacturing of various wide-strip-shaped large-power semiconductor lasers.

Description

technical field [0001] The invention relates to a cavity mode selection method of a wide-strip semiconductor laser, belonging to the technical field of lasers. Background technique [0002] Wide-strip high-power semiconductor lasers have the advantages of high output power, simple thermal management, and simple power combination. Usually, the wide-strip high-power semiconductor laser chip is flip-chip-bonded on a transitional heat sink with high thermal conductivity. Since the large operating current is concentrated in the light-emitting waveguide area, the waste heat generated by the non-radiative recombination of carriers leads to the temperature distribution in the waveguide area as follows: The convex distribution makes the effective refractive index of the light-emitting waveguide region also present a convex distribution, which increases the instability of the waveguide structure and the beam divergence angle when the laser is working. Usually, it is mainly through im...

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Problems solved by technology

Usually, the wide-strip high-power semiconductor laser chip is flip-chip-bonded on a transitional heat sink with high thermal conductivity. Since the large operating current is concentrated in the light-emitting waveguide area, the waste heat generated by the non-radiative recombination of carriers leads to the temperature distribution in the waveguide area as follows: Convex distribution, so that the effective refractive index of the light-emitting waveguide area also presents a convex distribution, which increases the instability of the waveguide structure and the beam divergence angle when the laser is working.

Usually, it is mainly through improving the epitaxial growth quality of laser materials, reducing defects in the light-emitting waveguide region, and suppressing the convex refractive index distribution caused by waste heat. Due to the limitations of the laser structure epitaxial growth source material and the purity of the atmosphere, there are still certain material defects that lead to wide The beam quality of the bar-shaped high-power semiconductor laser is obviously deteriorated under the high-current working condition

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