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A kind of film thermistor and its preparation method and its resistance value adjustment method

A thin-film thermistor and film-throwing technology, which is applied in the manufacture of resistors, resistors, resistors with negative temperature coefficients, etc., can solve the problems of shortening the service life of thin-film resistors, high aging coefficient, and restricting development, and achieve resistance value Small, low aging coefficient, and the effect of improving aging performance

Active Publication Date: 2017-06-23
DONGGUAN UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

And because Mn-Co-Ni-O thin film thermistor has the shortcoming of high resistance value, and Mn-Co-Ni-Cu-O quaternary thin film thermistor has the shortcoming of high aging coefficient, therefore, limit Mn-Co- Development of two single-layer thin film thermistors, Ni-O ternary thin film thermistor and Mn-Co-Ni-Cu-O quaternary thin film thermistor
[0005] In addition, the single-layer Mn-Co-Ni-Cu-O quaternary thin film layer in the prior art is easy to loose, causing the situation that the Mn-Co-Ni-Cu-O quaternary thin film layer and the substrate are easily peeled off, thereby Reduced lifetime of thin film resistors

Method used

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  • A kind of film thermistor and its preparation method and its resistance value adjustment method
  • A kind of film thermistor and its preparation method and its resistance value adjustment method
  • A kind of film thermistor and its preparation method and its resistance value adjustment method

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Embodiment 1

[0054] See figure 1 . A thin-film thermistor, comprising a substrate 1, a bottom layer of Mn-Co-Ni-Fe-O quaternary transition metal oxide film 2, and an intermediate layer of Mn-Co-Ni-Cu-O quaternary transition from bottom to top. Metal oxide film layer 3, top layer Mn-Co-Ni-O ternary transition metal oxide film layer 4 and electrode 5. In this embodiment, the substrate is Pt / TiO 2 / Ti / SiO 2 / Si substrate.

[0055] Among them, the bottom Mn-Co-Ni-Fe-O quaternary transition metal oxide film layer, the middle layer Mn-Co-Ni-Cu-O quaternary transition metal oxide film layer, the top layer Mn-Co-Ni-O three The primary transition metal oxide film layer has a three-layer structure, so that the thin film thermistor has the advantages of low resistance value and low aging coefficient.

Embodiment 2

[0057] See figure 1 . A thin-film thermistor, comprising a substrate 1, a bottom layer of Mn-Co-Ni-Fe-O quaternary transition metal oxide film 2, and an intermediate layer of Mn-Co-Ni-Cu-O quaternary transition from bottom to top. Metal oxide film layer 3, top layer Mn-Co-Ni-O ternary transition metal oxide film layer 4 and electrode 5. In this embodiment, the substrate is a Si substrate.

[0058] Among them, the bottom Mn-Co-Ni-Fe-O quaternary transition metal oxide film layer, the middle layer Mn-Co-Ni-Cu-O quaternary transition metal oxide film layer, the top layer Mn-Co-Ni-O three The primary transition metal oxide film layer has a three-layer structure, so that the thin film thermistor has the advantages of low resistance value and low aging coefficient.

Embodiment 3

[0060] See figure 1 . A thin-film thermistor, comprising a substrate 1, a bottom layer of Mn-Co-Ni-Fe-O quaternary transition metal oxide film 2, and an intermediate layer of Mn-Co-Ni-Cu-O quaternary transition from bottom to top. Metal oxide film layer 3, top layer Mn-Co-Ni-O ternary transition metal oxide film layer 4 and electrode 5. In this embodiment, the substrate is Al 2 o 3 substrate.

[0061] Among them, the bottom Mn-Co-Ni-Fe-O quaternary transition metal oxide film layer, the middle layer Mn-Co-Ni-Cu-O quaternary transition metal oxide film layer, the top layer Mn-Co-Ni-O three The primary transition metal oxide film layer has a three-layer structure, so that the thin film thermistor has the advantages of low resistance value and low aging coefficient.

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Abstract

The invention relates to the technical field of thin-film thermistors, in particular to a thin-film thermistor, a preparation method thereof, and a method for adjusting its resistance value. A kind of thin film thermistor, it is characterized in that: from bottom to top successively comprises substrate, bottom Mn-Co-Ni-Fe-O quaternary transition metal oxide film layer, middle layer Mn-Co-Ni-Cu-O Primary transition metal oxide film layer, top Mn‑Co‑Ni‑O ternary transition metal oxide film layer and electrodes; the NTC thin film thermistor exhibits Mn‑Co‑Ni‑O / Mn‑Co‑Ni‑O / Mn‑Co‑Ni‑O Cu‑O / Mn‑Co‑Ni‑Fe‑O three-layer structure. The resistance value of the thin film thermistor prepared by the invention is adjustable from about 0.5 to 3.1 MΩ, and the aging coefficient is less than 4.4%, so that the thin film thermistor has the advantages of low resistance value, low aging coefficient and long service life.

Description

technical field [0001] The invention relates to the technical field of thin-film thermistors, in particular to a thin-film thermistor, a preparation method thereof, and a method for adjusting its resistance value. Background technique [0002] Negative temperature coefficient (NTC) thermistors are widely used in temperature sensing and control of household appliances, automobiles, and industrial production equipment due to their high sensitivity, high reliability, and low price. Since the trend of miniaturization of electronic components has also extended to the field of sensors, thin film thermistors have followed this trend and have developed tremendously in the past 10 years. Compared with discrete thermistors, thin film thermistors have outstanding advantages such as fast response, low operating voltage, and low heat treatment temperature. At present, the development speed of thin film thermistor has far exceeded the traditional discrete thermistor. [0003] Thin film ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01C7/04H01C17/075
Inventor 何林杨雷吴木营
Owner DONGGUAN UNIV OF TECH
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