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Method for manufacturing inverted-pyramid-structure silicon surface with non-photoetching technology

An inverted pyramid, silicon surface technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as low cost, and achieve the effect of low cost and simple electrochemical method

Active Publication Date: 2015-06-24
LANZHOU INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, there is no simple, efficient, and low-cost method, especially one that can achieve large-area preparation

Method used

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  • Method for manufacturing inverted-pyramid-structure silicon surface with non-photoetching technology
  • Method for manufacturing inverted-pyramid-structure silicon surface with non-photoetching technology

Examples

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Embodiment 1

[0018] Clean the N-type (100) single crystal silicon wafer ultrasonically in acetone, and then fix it to one side of a cube-shaped PTFE etching tank (there are holes in the tank, etched on one side), the positive electrode is connected to the silicon wafer, and the negative electrode is connected to the graphite sheet . Electrochemical etching was carried out in HF ethanol solution under the condition of UV light backlight irradiation. The electrochemically etched silicon wafer is removed from the PTFE etching tank, and placed in NaOH solution at room temperature to remove the porous layer.

[0019] figure 1 The schematic diagram of the process of preparing the surface of single crystal silicon with an inverted pyramid structure by the electrochemical etching method shown shows that the electrochemical etching method used and the subsequent removal process of the porous layer are simple, convenient, and low in cost.

[0020] figure 2 The scanning electron microscopy result...

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Abstract

The invention discloses a method for manufacturing an inverted-pyramid-structure silicon surface with a non-photoetching technology. The method includes the steps of manufacturing an inverted-pyramid-structure interface covered with porous silicon on the surface of N-type monocrystalline silicon with the method of electrochemistry etching in a hydrofluoric acid ethyl alcohol solution, and then removing a porous silicon layer with the method of carrying out soaking through an alkaline solution to obtain the inverted-pyramid-structure surface. The obtained pyramid structure is the inverted pyramid structure formed by four {111} crystal faces, and the size of the pyramid structure ranges from 0.5 micrometer and 15 micrometers.

Description

technical field [0001] The invention relates to a method for preparing an inverted pyramid structure silicon surface by a non-photolithography technique, in particular to a fast, effective and low-cost method for preparing an inverted pyramid structure single crystal silicon surface by an electrochemical method. Background technique [0002] Photolithography is a technique in which a geometric pattern is built on a photoresist by exposure and development with the help of a photomask, and then this geometric pattern is transferred to a substrate by etching. This technology is often used in semiconductor integrated circuits and micro-electromechanical systems. Common ones include: ultraviolet lithography, X-ray lithography, electron beam lithography, and so on. With the advancement of science and technology, the resolution of this technology is also constantly improving, and various complex patterns in micron and nanometer scales can be realized by this technology. For exampl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/306
Inventor 王富国张俊彦
Owner LANZHOU INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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