Processing method of copper alloy target material

A processing method, copper alloy target technology, applied in metal material coating process, ion implantation plating, coating, etc., to achieve the effect of inhibiting electromigration, improving stability and uniformity, and improving uniformity

Active Publication Date: 2015-07-01
GRIKIN ADVANCED MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the forging method of this method is one-way upsetting, and only forging along the axial direction

Method used

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  • Processing method of copper alloy target material
  • Processing method of copper alloy target material
  • Processing method of copper alloy target material

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Experimental program
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Embodiment 1～5

[0021] The specification of the copper alloy ingot is φ150×130t, hot forging is carried out at 350-600°C, the forging method is X / Y / Z three-direction upsetting and drawing, the upsetting and drawing ratio is 2:1, and the final forging temperature is 450°C , the deformation of the cold rolling pass is 15%, and the rolling is φ400×18t after cold rolling;

[0022] Then recrystallization heat treatment is carried out under the condition of 400℃ / 2h, and the target blank is rapidly cooled to make a target material, which is processed into a φ380×15t target blank by machining, and then it is bonded to the copper alloy back plate by diffusion welding Welded to make a sputtering target.

[0023] The results obtained are shown in Table 1. It can be seen that the average grain size of the sputtering target obtained after hot forging in the range of 350°C to 600°C and then cold rolling heat treatment is below 30 μm. As the forging temperature increases, The average grain size increases g...

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Abstract

The invention discloses a processing method of a copper alloy target material and belongs to the field of a sputtering target material manufacturing technology. The method mainly comprises the following steps: uniformly heating a high-purity copper alloy ingot to 350-600 DGE C by a heating furnace and carrying out thermal insulation for 1-3 h; carrying out hot forging on the ingot respectively in the X/Y/Z three directions by forging equipment; carrying out multi-pass reciprocating cold-rolling on the forged billet by a two-roll mill with the pass deformation being 8-20% and the total deformation being 70-90%; and treating the rolled billet by a thermal treatment furnace at 250-450 DEG C and carrying out thermal insulation for 2-4 h so as to obtain a high-purity copper alloy sputtering target billet which meets requirements. Average grain size of the copper alloy target material obtained by the above method is below 30 microns, and texture is distributed at random. The target material can meet the technological manufacture procedure of an integrated circuit 45nm and below.

Description

technical field [0001] The invention belongs to the technical field of target material manufacturing, and in particular relates to a processing method for a copper alloy target material. Background technique [0002] Integrated circuit miniaturization process technology is changing with each passing day, and the structural size has been pushed from micron to deep submicron, and then entered the nanometer era. At present, the global 45nm and below process capacity accounts for an increasing proportion of the total semiconductor manufacturing capacity. [0003] At the 45nm and below process stage, the metal line width of the IC chip circuit is getting smaller and smaller, and the number of wire layers is increasing. And due to the relationship between electrical and mechanical characteristics, signal transmission will be delayed due to short circuit. The signal transmission of the logic chip circuit also shortens the winding distance and increases the winding capacity due to ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C22F1/08
Inventor 曾浩李勇军何金江熊晓东刘书芹刘红宾高岩王欣平
Owner GRIKIN ADVANCED MATERIALS
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