Heat insulation and electricity conduction apparatus for PECVD reaction chamber, and application thereof

Abstract

The present invention provides a thermal insulating and electric conducting apparatus for a PECVD reaction chamber. The thermal insulating and electric conducting apparatus is located in a PECVD reaction chamber at the temperature higher than 400oC, and the apparatus includes a thermal insulator made from thermal insulating materials and an electric conducting layer covered on the insulator, the thickness of electric conducting layer should be great than or equal to the skin depth of the electric conducting layer material. The present invention can achieve the effects of good thermal insulation and electric conduction in a high temperature PECVD chamber, and overcome the problem that the plasma field is affected by the floating potential generated by a heating panel owning to the thermal insulating material being also the electric conducting material in the prior art.

Description

technical field [0001] The invention relates to the field of high-temperature PECVD equipment for manufacturing AMOLEDs, in particular to an adiabatic and conductive device used in a high-temperature PECVD reaction chamber. technical background [0002] PECVD (plasma-enhanced chemical vapor deposition) is the abbreviation of plasma-enhanced chemical vapor deposition technology, and it is a main technology for preparing AMOLED (active matrix organic light-emitting diode). In traditional industries, PECVD equipment is mostly suitable for processes with relatively low process temperatures. For example, the process temperature for making thin-film solar cells is lower than 250°C. [0003] With the rise of AMOLED in recent years, it has put forward a temperature requirement higher than 450°C for the production equipment PECVD equipment, requiring that the cavity and its internal components of the PECVD equipment must have high temperature resistance, and these high temperature ...

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Problems solved by technology

[0003]With the rise of AMOLED in recent years, it puts forward a temperature requirement higher than 450°C for the production equipment PECVD equipment, requiring the chamber and its internal components of the PECVD equipment It must have high temperature resistance, and the processing and use of these high temperature resistant materials have greatly increased the manufacturing cost of PECVD equipment, and also increased the difficulty of control and maintenance of PECVD equipment

[0004] In order to avoid high temperature damage to the chamber of PECVD equipment, people need to use a good heat insulator between the heating device and the chamber. However, the commonly used heat insulating materials are Most of them are insulating materials, which makes the heating device and the cavity present an electrical insulation state. When the cavity is grounded, the heating device becomes a suspended conductor with a certain floating potential in the plasma discharge atmosphere, and in its The surrounding excitation has a certain distributed electric field. The newly excited electric field interferes with the plasma distribution in the original PECVD reaction chamber, affects the film formation quality in the reaction chamber and increases the difficulty of controlling the plasma distribution and the repeatability of the process. For example, in In the U.S. patent application US20100282169A1, the inventor Bum-Sul Lee et al. disclosed a thermal insulation device, which is used in the manufacturing process of semiconductor devices at 400 ℃ ~ 800 ℃. This invention realizes PECVD film formation at high temperature, but it is Realize the high temperature of the stage where the substrate is placed so that the lower electrode is at a floating potential, and the electric field generated by the floating potential of the lower electrode interferes with the distribution of the original plasma

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