A kind of resistive memory to avoid misreading and preparation method thereof

A resistive variable memory and resistive variable technology, applied in the field of memory, can solve the problems of easy misreading and instability, and achieve the effects of stable resistance value change, excellent anti-fatigue characteristics, and significant switching effect
CN104810477BActive Publication Date: 2017-05-31HEBEI UNIVERSITY
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
HEBEI UNIVERSITY
Publication Date
2017-05-31

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Abstract

The invention provides a misunderstanding prevention resistance random access memory and a production method thereof. The structure of the resistance random access memory lies in that a resistance random medium layer and an Ag electrode membrane layer are sequentially formed on a Pt membrane layer of a Pt / Ti / SiO2 / Si substrate; the resistance random medium layer comprises a first ferrite bismuth membrane layer, a second ferrite bismuth doped silver membrane layer and a third ferrite bismuth membrane layer which are sequentially formed. By the arrangement, stable resistance changes are presented, resistances of high-low resistance states are quite concentrated in distribution, and the high resistance and the low resistance are large in difference, so that confusion of the high and low resistances is less prone to occurrence, and misunderstanding is not easy to occur during data reading. The resistance random access memory is remarkable in switch effect and quite beneficial to readout of the memory. In addition, anti-fatigue performance of the resistance random access memory under the high-low resistance states is quite good.
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Description

technical field

[0001] The invention relates to a memory, in particular to a resistive memory which can avoid misreading and a preparation method thereof. Background technique

[0002] In recent years, nano-scale resistive switching Radom Access Memory (RRAM) has become a popular technology due to its super memory function, ultra-fast switching speed, excellent fatigue resistance, excellent scalability and CMOS compatibility. It is one of the strong candidates for next-generation high-density memory and has been extensively studied. RRAM is a typical two-terminal metal-based metal-dielectric layer-metal sandwich structure. It mainly uses the reversible transition phenomenon between the high and low resistance states of the intermediate dielectric layer under the action of different electric excitations to store data.

[0003] At present, researchers have discovered a variety of intermediate dielectric layer materials, including perovskite oxides, binary transition metal ox...

Claims

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