Cadmium telluride thin film solar cell with quantum well structure and manufacturing method thereof
A technology of solar cells and quantum wells, which is applied in the manufacture of final products, sustainable manufacturing/processing, circuits, etc., can solve problems such as matching, and achieve the effects of avoiding abnormal growth, high photoelectric conversion efficiency, and favorable absorption
Active Publication Date: 2016-08-17
湖南共创光伏科技有限公司
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Problems solved by technology
[0016] The technical problem to be solved by the present invention is, aiming at the problems existing in the prior art in the matching of thin-film materials and solar spectrum energy gaps, the defects generated during the formation and growth of crystal grains, and how to fully absorb sunlight and improve the photoelectric conversion efficiency, propose Cadmium telluride thin film solar cell with quantum well structure and manufacturing method thereof
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Embodiment Construction
[0038] Below in conjunction with embodiment the present invention will be further described.
[0039] like figure 2 and image 3 As shown, a cadmium telluride thin-film solar cell with a quantum well structure, according to the direction of incident light, sequentially includes a glass substrate, a TCO front electrode, a CdS window layer, a CdTe absorbing layer, a back contact layer, a metal back electrode, and a back reflector. Packaging material and backplane glass, in which the CdTe absorber layer (p layer) and the CdS window layer (i layer) form a pn junction.
[0040] The CdTe absorbing layer in the pn structure of the cadmium telluride thin film solar cell includes a quantum well structure formed by multiple periods, wherein one period includes two upper and lower layers with the same crystal structure but different energy gaps, and the upper layer is a high energy gap layer, The lower layer is a low energy gap layer; its quantum well structure is formed by a matching...
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The invention discloses a cadmium telluride thin film solar cell with a quantum well structure and a manufacturing method thereof. The cell includes a pn junction formed by a CdTe absorption layer and a CdS window layer. The pn structure of the cadmium telluride thin film solar cell The CdTe absorbing layer in includes a quantum well structure formed by multiple periods. This kind of quantum well can separate and capture free electrons, and under the excitation of sunlight, a large current can be formed to improve the efficiency of thin-film solar cells. The quantum well structure avoids the abnormal growth of grains and the formation of holes and cracks, and prepares dense, uniform grain size and high-quality films with matched energy gaps. At the same time, the quantum well structure is conducive to fully absorbing sunlight. absorb. Thus, the efficiency of the cadmium telluride thin film solar cell is further improved.
Description
technical field [0001] The invention relates to a solar cell, a thin-film solar cell with a quantum well structure and a manufacturing method thereof, in particular to a cadmium telluride thin-film solar cell structure with a quantum well structure and a manufacturing method thereof. Background technique [0002] Since the French scientist AE. Becquerel discovered the photoelectric conversion phenomenon in 1839, the first solar cell based on semiconductor selenium was born in 1883. Russell obtained the first solar cell patent (US.2,402,662) in 1946, and its photoelectric conversion efficiency was only 1%. It was not until 1954 that Bell Laboratories' research discovered that doped silicon-based materials have high photoelectric conversion efficiency. This research laid the foundation for the modern solar cell industry. In 1958, the Haffman Power Company of the United States installed the first solar panel on a satellite in the United States, and its photoelectric conversio...
Claims
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IPC IPC(8): H01L31/0445H01L31/0749H01L31/0352
CPCH01L31/0296H01L31/035236H01L31/073Y02E10/541Y02E10/543Y02P70/50
Inventor 李廷凯李晴风钟真
Owner 湖南共创光伏科技有限公司