Nitrogen polar surface LED based on metal nitride semiconductor and preparation method

Abstract

The invention discloses a nitrogen polar surface LED based on a metal nitride semiconductor, belonging to the technical field of semiconductor devices. The LED successively comprises an n-type semiconductor layer of the nitrogen polar surface, a multi-quantum well active region of the nitrogen polar surface, an electron barrier layer of the nitrogen polar surface and a p-type semiconductor layer of the nitrogen polar surface from bottom to top, and the upper layer of the p-type semiconductor layer of the nitrogen polar surface is provided with a p-type electrode. The LED further comprises an n-type semiconductor layer of a metal polar surface, the n-type semiconductor layer of the metal polar surface is arranged at the lateral side of the n-type semiconductor layer of the nitrogen polar surface and completely bonded to the n-type semiconductor layer of the nitrogen polar surface, and the upper surface of the n-type semiconductor layer of the metal polar surface is provided with an n-type electrode. Compared with the prior art, the n-type semiconductor layer of the metal polar surface serves as an ohmic contact layer of the n-type semiconductor layer of the nitrogen polar surface LED, so as to overcome the problem that an ohmic electrode is not easy to prepare on the n-type semiconductor layer of the nitrogen polar surface, the preparation technology is simple, and the cost is low.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a nitrogen polar surface light-emitting diode based on a metal nitride semiconductor and a preparation method. Background technique [0002] As a new type of high-efficiency solid-state light source, LED (light-emitting diode) has significant advantages such as energy saving, environmental protection, long life, small size, and low operating voltage, and has been widely used in the world. [0003] In traditional LEDs made of Group III metal nitride semiconductor materials, Group III metal nitride semiconductor materials grow along the [0001] direction of sapphire, that is, the C-plane direction, and finally obtain gallium nitride and nitride on the metal polar surface. Aluminum or their alloy crystals. Different from metal polar surface semiconductor materials, in nitrogen polar surface semiconductor materials, due to the opposite directions of the piezoelectric po...

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to overcome the deficiencies in the prior art and provide a nitrogen polar surface light-emitting diode based on metal nitride semiconductors, using the metal polar surface n-type semiconductor layer as the n-type semiconductor in the nitrogen polar surface light-emitting diode. The ohmic contact layer of the first layer can avoid the problem that it is difficult to make a good ohmic electrode on the n-type semiconductor layer of the nitrogen polar surface, and the preparation process is simple and the realization cost is low

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