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Microwave dielectric ceramic material with ab positions substituted simultaneously and preparation method thereof

A microwave dielectric ceramic, a representative technology, applied in the field of microwave dielectric ceramic materials and its preparation, can solve the problems of low dielectric constant, high quality factor, high sintering temperature, etc., to reduce the frequency temperature coefficient, easy to stabilize production, and improve performance Effect

Inactive Publication Date: 2017-07-11
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology

Both have high Q×f values. Although composite perovskite structure ceramics (commonly replaced by A and B sites) generally have low frequency temperature coefficients, their dielectric constants are generally low (<60), And generally the sintering temperature is high (≥1400°C), which is not conducive to energy saving, and is not suitable for use in radio frequency identification
At the same time, the research progress of B-site substitution is slow, and there are few related literature reports
In order to adjust the frequency temperature coefficient to zero, the B-site tetravalent substitution will greatly reduce the dielectric constant and quality factor, while the B-site non-quaternary substitution will reduce the dielectric constant, but will maintain a high quality factor

Method used

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  • Microwave dielectric ceramic material with ab positions substituted simultaneously and preparation method thereof
  • Microwave dielectric ceramic material with ab positions substituted simultaneously and preparation method thereof
  • Microwave dielectric ceramic material with ab positions substituted simultaneously and preparation method thereof

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Embodiment

[0035] A kind of microwave dielectric ceramic material that AB positions are substituted at the same time, the general chemical formula is (Ba 1-a A a ) 6-3x (Nd 1-b B b ) 8+2x (Ti 1-c C c ) 18 o 54 , C=MN, where x=3 / 4, 0.05≤a≤0.2, 0.05≤b≤0.15, 0.02≤c≤0.08, A represents the divalent Ca and Sr elements replacing the A1 position, B represents the trivalent element replacing the A2 position Valence Sm and Bi elements, M represents Nb whose valence is higher than tetravalent, N represents one or several other elements whose valence is lower than tetravalent and the ionic radius is similar to Ti, M and N can be substituted at the same time or alone.

[0036] N is one or more of Zn, Co, Ni, Mg and Al. When MN is substituted at the same time, if N is Al, then the molar ratio N:M=1:1, if N is one or more of Zn, Co, Ni, Mg, then the total molar ratio N:M= 1:2.

[0037] The microwave dielectric ceramic material is Ba of tungsten copper ore structure 6-3x Nd 8+2x Ti 18 o 5...

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Abstract

The invention provides a microwave dielectric ceramic material with AB positions replaced simultaneously and a preparation method thereof. The general chemical formula of the material is (Ba1-aAa)6-3x(Nd1-bBb)8+2x(Ti1-cCc)18O54, C=MN , where x=3 / 4, 0.05≤a≤0.2, 0.05≤b≤0.15, 0.02≤c≤0.08, A represents the divalent Ca and Sr elements that replace the A1 position, B represents the trivalent Sm and Bi that replace the A2 position Elements, M represents Nb whose valence is higher than tetravalent, N represents one or several other elements whose valence is lower than tetravalent and the ionic radius is similar to Ti, M and N are substituted at the same time or alone, and the preparation method is according to chemical The general formula determines the respective mass percentages, which are mixed by ball milling, pre-fired at 1000-1150°C, and then sintered at 1250-1450°C; the dielectric constant and frequency temperature coefficient of the prepared material can be adjusted while maintaining high The Q×f value of the formula does not contain Pb, Cd and other volatile or heavy metals, and the performance has been greatly improved. The domestic supply of raw materials is sufficient and the price is low, making it possible to reduce the cost of high-performance microwave ceramics.

Description

technical field [0001] The invention relates to the field of electronic component materials, in particular to a microwave dielectric ceramic material with AB positions simultaneously substituted and a preparation method thereof. Background technique [0002] In recent years, with the rapid development of mobile communication technology and Internet of Things technology, the combination of the two has promoted the development of radio frequency identification (RFID). Radio frequency identification technology is not only one of the core technologies of the sensing layer of the Internet of Things, but also a wireless communication technology. Its system consists of readers, antennas and electronic tags. Microwaves are required for electronic tags, antennas and readers. Dielectric ceramic. Therefore, microwave dielectric ceramics are the core basic materials for preparing radio frequency electronic tags, and the dielectric constant of microwave dielectric ceramic materials is g...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/462C04B35/622
Inventor 唐斌陈鹤拓郭霞钟朝位张树人
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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