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Growth method for germanium-silicon-boron epitaxial layer

A growth method and epitaxial growth technology are applied in the field of semiconductor device manufacturing, which can solve the problems affecting device performance and surface smoothness, and achieve the effect of improving device performance.

Active Publication Date: 2015-08-19
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] The presence of such particles on the polysilicon gate will affect its surface smoothness, which in turn will affect device performance

Method used

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  • Growth method for germanium-silicon-boron epitaxial layer
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  • Growth method for germanium-silicon-boron epitaxial layer

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Embodiment Construction

[0023] The present invention will be described in detail below with reference to the accompanying drawings. It should be understood that the following detailed description is merely exemplary in nature and is not intended to limit the embodiments of the subject matter or applications and the uses of these embodiments. As used herein, the word "exemplary" means "serving as an example, instance or illustration". Any implementation described herein as exemplary is not to be construed as necessarily preferred or superior over other implementations. Furthermore, there is no intention to be bound by any expressed or implied theory presented in the preceding technical field, background, brief summary or the following detailed description.

[0024] The terms "first", "second", "third", "fourth", etc., if any, in the description and claims are used to distinguish between similar elements and not necessarily to Describe a specific sequence or chronological order. It is to be understo...

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Abstract

The invention discloses a growth method for a germanium-silicon-boron epitaxial layer. The method comprises the steps: selectively growing an SiGe layer on a side wall and defective surface of a trench after the TMAH etching technology; subsequently ironing out the defects of the SiGe layer and a polysilicon gate in an etching manner through HCl gas; and then selectively growing an SiGeB layer in an epitaxial growth manner in the trench, and filling a trench of a silicon substrate.

Description

technical field [0001] The invention generally relates to the manufacturing technology of semiconductor devices, in particular to a method for growing an epitaxial layer of germanium silicon boron (SiGeB). Background technique [0002] At present, the semiconductor manufacturing industry mainly grows devices on the wafer device side of the silicon substrate. For example, the device structure of a metal oxide semiconductor field effect transistor (MOSFET) includes an active region, a source, a drain and a gate, wherein the The active region is located in the semiconductor silicon substrate, the gate is located above the active region, ion implantation is performed in the active region on both sides of the gate to form a source and a drain, and a conductive channel is provided below the gate , there is a gate dielectric layer between the gate and the conductive channel. According to different types of ion implantation, it is divided into hole type metal oxide semiconductor fi...

Claims

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Application Information

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IPC IPC(8): H01L21/20H01L21/336
Inventor 涂火金
Owner SEMICON MFG INT (SHANGHAI) CORP