Method for manufacturing crystal semiconductor film

Abstract

A manufacturing method in which, when laser-annealing a non-single-crystal semiconductor film, in order to crystallize the semiconductor film using an appropriate scanning pitch and number of irradiation cycles, a line-beam-shaped pulse laser, having a short-axis width of 100-500 µm and a flat section in the beam cross-section shape in the short-axis direction, is scanned relative to the non-single-crystal semiconductor film, whereby the laser moves at each pulse, and performs overlapping irradiation at an irradiation cycle (n), the transistor channel length being defined as b; the pulse laser having an irradiation pulse energy density (E) at which crystal particle size growth reaches saturation due to multiple-cycle irradiation, the density being lower than the irradiation pulse energy density at which microcrystallization occurs on the non-single-crystal semiconductor film due to the irradiation of the pulse laser; the number of irradiation cycles (n) being at least (n0-1), where n0 is the number of irradiation cycles at which the growth in the crystal grain diameter, induced by the pulse laser irradiation having irradiation pulse energy density (E), reaches saturation; the scanning direction of the pulse laser being defined as the channel length direction of the transistor; and a movement amount (c) for each pulse being less than b.

Description

technical field [0001] The present invention relates to a method for producing a crystalline semiconductor film that irradiates a non-single crystal semiconductor film multiple times while moving a pulsed laser beam in the shape of a line beam (overlapping irradiation). Background technique [0002] Generally, thin film transistors used in televisions and computer monitors are made of amorphous silicon (hereinafter referred to as a-silicon), but if silicon is crystallized by a certain method (hereinafter referred to as p-silicon), The function of TFT can be greatly improved. At present, excimer laser annealing technology has been put into practical use as a low-temperature Si crystallization process, and it is widely used for small displays such as mobile phones, and even large-screen displays. [0003] This laser annealing method is to irradiate a non-single crystal semiconductor film with an excimer laser with high pulse energy, thereby making the semiconductor absorbing ...

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Problems solved by technology

The problem to be solved in Patent Document 1 is that the sequential scanning of the laser is accompanied by non-uniformity (error) in crystallinity, which causes variation between elements

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