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InP-based HEMT tumor marker sensor and manufacturing method thereof

A technology of tumor markers and sensors, which is applied in the field of detection of tumor marker sensors, can solve the problems of long validity period, poor stability, and short fluorescence lifetime of fluorescent markers, and achieve the effect of low noise and high mobility

Inactive Publication Date: 2015-09-02
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

EIA has the advantages of simple preparation of markers, long validity period, and no pollution to the environment. After the introduction of the amplification system in the late 1990s, the detection sensitivity surpassed that of RIA technology, but the detection limit of the first two technologies is only at the mol / L level.
In 1981, Pannagli combined the principle of chemiluminescence with the immune reaction and established the chemiluminescence immunoassay (CLIA). Although the sensitivity of this method can reach the level of radioimmunity, there are many factors that affect the detection results and the stability is poor. And after the chemical reaction, the luminescence of the sample cannot be reproduced
Time-resolved fluorescence immunoassay (TFIA) and chemiluminescence immunoassay (CLIA) both use the fluorescence generated by the chemical reaction between tumor markers and sensitive membranes to detect samples. The fluorescence lifetime of ordinary fluorescent markers is very short, which affects Elements of Detection Sensitivity

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  • InP-based HEMT tumor marker sensor and manufacturing method thereof
  • InP-based HEMT tumor marker sensor and manufacturing method thereof
  • InP-based HEMT tumor marker sensor and manufacturing method thereof

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Embodiment Construction

[0022] InP-based HEMT has higher electron mobility, electron drift velocity and saturation drift velocity, two-dimensional electron gas concentration, etc., and has the characteristics of low noise and better thermal conductivity. The inventors of the present invention applied it to tumor markers In the sensor, it is expected to greatly improve the detection sensitivity and response rate of the device.

[0023] The InP-based HEMT tumor marker sensor of the present invention includes an InP-based HEMT transducer, a biomolecule carrier and a biosensitive membrane. The transducer includes a source, a drain and a grid. The biomolecular carrier is the carrier of bioactive molecules, forming the grid of the transducer, and the biosensitive film is attached to the biomolecular carrier. The biosensitive membrane can specifically recognize tumor markers, and is affected by the charge of the tumor marker itself, which changes the charge distribution on the surface of the gate, which in ...

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Abstract

The invention discloses an InP-based HEMT tumor marker sensor and a manufacturing method thereof. The InP-based HEMT tumor marker sensor comprises an InP-based HEMT energy transducer, a biomolecule carrier and a biosensitive membrane, the energy transducer comprises a source electrode, a drain electrode and a grid electrode, the biomolecule carrier is formed on the grid electrode of the energy transducer, the biosensitive membrane is attached to the biomolecule carrier and can specifically identifies tumor markers, and the distribution of charges on the surface of the grid electrode changes due to influences of charges of the tumor markers, so the concentration of two dimensional electron gases in the channel of the energy transducer is influenced, thereby the source-drain current of the energy transducer changes. The InP-based HEMT tumor marker sensor improves the detection limit of the tumor markers to a new degree, and offers opportunities for prevention and treatment of malignant tumors.

Description

technical field [0001] The invention relates to the fields of semiconductor devices and biochemistry, in particular to a sensor for detecting tumor markers developed by using an InP-based high electron mobility transistor (HEMT) and a manufacturing method thereof. Background technique [0002] According to the data from the 2012 China Cancer Registration Annual Report, the incidence of cancer in my country has continued to increase in the past two decades. Six people in the country are diagnosed with malignant tumors every minute. The probability of Chinese residents suffering from cancer in their lifetime is 22%. Lung cancer, liver cancer, gastric cancer, esophageal cancer, colorectal cancer, and breast cancer threaten people's lives all the time. Early detection, early diagnosis, and early treatment can improve the survival rate of patients and provide opportunities for curing cancer patients. [0003] Tumor markers are a class of substances whose content in the body of p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N33/574G01N33/532
CPCG01N33/574G01N33/532
Inventor 张杨王成艳关敏丁凯张斌田林璋黄丰曾一平
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI