InP-based HEMT tumor marker sensor and manufacturing method thereof
A technology of tumor markers and sensors, which is applied in the field of detection of tumor marker sensors, can solve the problems of long validity period, poor stability, and short fluorescence lifetime of fluorescent markers, and achieve the effect of low noise and high mobility
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment Construction
[0022] InP-based HEMT has higher electron mobility, electron drift velocity and saturation drift velocity, two-dimensional electron gas concentration, etc., and has the characteristics of low noise and better thermal conductivity. The inventors of the present invention applied it to tumor markers In the sensor, it is expected to greatly improve the detection sensitivity and response rate of the device.
[0023] The InP-based HEMT tumor marker sensor of the present invention includes an InP-based HEMT transducer, a biomolecule carrier and a biosensitive membrane. The transducer includes a source, a drain and a grid. The biomolecular carrier is the carrier of bioactive molecules, forming the grid of the transducer, and the biosensitive film is attached to the biomolecular carrier. The biosensitive membrane can specifically recognize tumor markers, and is affected by the charge of the tumor marker itself, which changes the charge distribution on the surface of the gate, which in ...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More 