LED structure and formation method thereof

A technology of LED structure and nitride semiconductor, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as low luminous efficiency, and achieve the effects of improving luminous efficiency, reducing resistivity, and uniform diffusion

Inactive Publication Date: 2015-09-09
BYD CO LTD
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[0004] The present invention aims to solve the above-mentioned techn

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  • LED structure and formation method thereof
  • LED structure and formation method thereof

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[0017] The embodiments of the present invention will be described in detail below. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals indicate the same or similar elements or elements with the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary, and are intended to explain the present invention, but should not be construed as limiting the present invention.

[0018] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " "Back", "Left", "Right", "Vertical", "Horizontal", "Top", "Bottom", "Inner", "Outer", "Clockwise", "Counterclockwise" and other directions or positions indicated The relationship is based on the orientation or positional relationship shown in the drawings, which is only for the convenience of describing the pr...

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Abstract

The invention discloses an LED structure and a formation method thereof. The LED structure comprises a substrate; a first doping type nitride semiconductor layer arranged on the substrate, wherein a first doping type is one selected from an N type and a P type; a multiple-quantum-well light-emitting layer arranged on the first doping type nitride semiconductor layer; a second doping type nitride semiconductor layer arranged on the multiple-quantum-well light-emitting layer, wherein a second doping type is opposite to the first doping type; an N electrode connected with the N-type nitride semiconductor layer; a P electrode connected with the P-type nitride semiconductor layer; a current diffusion layer arranged between the P-type nitride semiconductor layer and the P electrode; and a polarization insertion layer arranged in the N-type nitride semiconductor layer, wherein the polarization insertion layer and the N-type nitride semiconductor layer have lattice mismatch. According to the LED structure and the formation method thereof, resistivity of the N-type nitride semiconductor layer is reduced by utilizing the polarization insertion layer, and finally, the luminous efficiency is improved.

Description

technical field [0001] The invention belongs to the field of LED manufacturing, and in particular relates to an LED structure and a forming method thereof. Background technique [0002] Due to the advantages of environmental protection, energy saving, and long life, LEDs are widely used. In particular, gallium nitride (GaN)-based LEDs can emit short- and medium-wavelength light in visible light such as violet light and blue light, making it possible for LED solid-state lighting to be widely used in production and life. At present, the basic structure of GaN-based LED chip is substrate, N-type GaN layer, N electrode, multi-quantum well light-emitting layer, P-type GaN layer, current diffusion layer, P electrode and so on from bottom to top. Among them, the substrate can usually use heterogeneous substrates such as silicon carbide, sapphire, and silicon single crystal. Among them, the price of silicon carbide substrate is relatively high and its single crystal growth technol...

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Application Information

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IPC IPC(8): H01L33/14
Inventor 张旺
Owner BYD CO LTD
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