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Graphene thin-film device and preparation method thereof

A graphene film, graphene technology, applied in the direction of pretreatment surface, coating, device for coating liquid on the surface, etc., can solve the problems such as the inability to meet the heat dissipation requirements of high-power devices, the poor heat dissipation effect of interface heat dissipation materials, and the like, To meet the needs of high-power heat dissipation, excellent heat dissipation effect, and the effect of controllable thickness

Inactive Publication Date: 2015-09-23
SHANGHAI UNIV +1
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  • Description
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  • Application Information

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Problems solved by technology

[0003] In view of this, the embodiment of the present invention provides a graphene thin film device and its preparation method to solve the poor heat dissipation effect of interface heat dissipation materials in the prior art, especially the heat dissipation requirements of high-power devices that cannot be packaged in high-density systems. The problem

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  • Graphene thin-film device and preparation method thereof

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[0035] In a second aspect, an embodiment of the present invention provides a method for preparing a graphene thin film device, comprising the following steps:

[0036] Add raw graphite to cationic surfactant solution to obtain a mixed solution, and ultrasonically treat the obtained mixed solution at a power of 80w to 8000w for 10 minutes to 5 hours, so that the raw graphite is partially peeled off to obtain graphene and raw graphite mixed dispersion;

[0037] The mixed dispersion liquid is left to stand, and after the mixed dispersion liquid is layered, take the solution of 70-90% of the upper layer and carry out centrifugation; Under the power of 80w ~ 8000w, perform ultrasonic treatment again for 10 minutes ~ 2 hours, so that the original graphite in it is peeled off to obtain a graphene dispersion; vacuum dry the graphene dispersion until the graphene dispersion becomes turbid , to obtain graphene cloudy liquid;

[0038]Take the target part, apply the obtained graphene tu...

Embodiment 1

[0057] A kind of preparation method of graphene film device, comprises the following steps:

[0058] (1) Add the original graphite to the sodium cholate solution with a concentration of 0.1 mg / mL to obtain a mixed solution. The concentration of the original graphite in the sodium cholate solution is 1 mg / mL; ultrasonicate the resulting mixed solution for 10 minutes at a power of 8000W , to obtain a mixed dispersion, leave the mixed dispersion, after the mixed dispersion is layered, take 90% of the upper layer solution and centrifuge, the centrifugal speed is 10000r / min, and the centrifugal time is 15 minutes;

[0059] (2) With the above-mentioned centrifuged solution, take 80% of the solution in the upper layer and perform ultrasonication again for 10 minutes at a power of 8000W to obtain a graphene dispersion; vacuum-dry the graphene dispersion at 30°C and a pressure of 1Kpa for about 3 hours , until the graphene dispersion appears turbid to obtain a graphene turbid solution;...

Embodiment 2

[0062] A kind of preparation method of graphene film device, comprises the following steps:

[0063] (1) Add the original graphite to the sodium cholate solution with a concentration of 2 mg / mL to obtain a mixed solution, the concentration of the original graphite in the sodium cholate solution is 0.1 mg / mL; ultrasonicate the resulting mixed solution for 60 minutes at a power of 5000W , to obtain the mixed dispersion, leave the mixed dispersion, after the mixed dispersion is layered, take 90% of the solution in the upper layer and carry out centrifugation, the centrifugal speed is 20000r / min, and the centrifugation time is 5 minutes;

[0064] (2) With the above centrifuged solution, take 80% of the solution in the upper layer and perform ultrasonication again for 30 minutes at a power of 5000W to obtain a graphene dispersion; vacuum-dry the graphene dispersion at 10°C and 100Kpa pressure for about 1 hour , until the graphene dispersion appears turbid to obtain a graphene turbi...

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Abstract

The invention provides a graphene thin-film device including a target part and a graphene thin film attached to the surface of the target part, the thickness of the graphene thin film is in the range of 0.34nm-4nm, The graphene thin-film device has an excellent cooling effect, and can meet large-power cooling needs and high-density packaging. The invention further provides a preparation method of the graphene thin-film device. through the organic combination of a liquid phase stripping method and semiconductor preparation technology, the graphene thin film is prepared on the surface of the target part, the preparation process and operation are simple, high-temperature process is not needed, production of a large-size thin film is facilitated, the thin film is suitable for batch production, the thickness and shape of the prepared graphene thin film are controllable, the graphene thin film is tightly combined with the surface of the target part, problems that interface cooling materials in the prior art are bad in cooling effect, and cannot meet the large-power device cooling demands for high-intensity system packaging are solved, and a good foundation is better provided for a high-power electronic device.

Description

technical field [0001] The invention relates to the technical field of graphene manufacture and application, in particular to a graphene thin film device and a preparation method thereof. Background technique [0002] At present, interface heat dissipation materials widely used in microelectronic packaging include heat dissipation pads, heat conduction grease, heat dissipation tapes, heat conduction adhesives, solders, phase change materials, etc., but due to their low thermal conductivity (generally in the range of 2-6W / mK ), limited geometric shape (especially large thickness), poor thermal stability and other shortcomings, its heat dissipation effect is not good, and it cannot meet the needs of high-density system packaging while meeting the heat dissipation requirements of high-power chips with high surface temperature. Contents of the invention [0003] In view of this, the embodiments of the present invention provide a graphene thin film device and its preparation me...

Claims

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Application Information

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IPC IPC(8): B05D7/24B05D1/32B05D3/00
Inventor 刘建影方雯洪宇平
Owner SHANGHAI UNIV
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