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Integrated radiating base plate and making method thereof

A technology for heat-dissipating substrates and metal substrates, which is used in the manufacture of semiconductor/solid-state devices, electrical components, and electrical solid-state devices. effect of effect

Inactive Publication Date: 2005-09-21
FENG CHIA UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] (3) Continuation of shortcoming (2), as a result of the roughening of the surface of the polymer epoxy resin film 12, it is impossible to make a circuit with a low line width
[0011] (4) The wet electroplating method will bring water pollution to the environment
[0012] This existing integrated heat dissipation substrate 1 has disadvantages such as insufficient thermal conductivity, cumbersome and complicated manufacturing procedures, affecting the service life of components, inability to manufacture low-width circuits, and causing water pollution. Therefore, how to manufacture an integrated heat dissipation substrate with good heat dissipation To improve the heat dissipation of substrates and improve the shortcomings mentioned above is a major problem that related companies that develop heat dissipation substrates need to overcome

Method used

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  • Integrated radiating base plate and making method thereof
  • Integrated radiating base plate and making method thereof
  • Integrated radiating base plate and making method thereof

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Effect test

Embodiment 1

[0064] Place an aluminum substrate in an electrolytic bath of an electrolyte composition composed of an ammonia solution with a concentration of 4.5vol. 2 The current density of the anode micro-arc technique was carried out for 30 minutes, so as to prepare and form an aluminum oxide insulating layer with a thickness of about 15 μm on the aluminum substrate. In the first embodiment, the concentration of the potassium phosphate in the composition is 0.5M, the concentration of the potassium chromate in the composition is 0.1M, and the concentration of the copper acetate in the composition is 0.35M. Relevant descriptions about anode micro-arc technology can be found in patents such as RU2,181,392, CN1,311,354 and DE4,104,847. The previous patents mentioned above are hereby incorporated into this case as a reference.

[0065] Several wires are formed on the alumina insulating layer by a cathodic arc discharge ion plating. First, place the aluminum substrate grown with the alumina...

Embodiment 2

[0070] The second embodiment is substantially the same as the first embodiment, the difference lies in the preparation process of the copper wires. In the second embodiment, the copper wires are formed on the aluminum oxide insulating layer with a photoresist layer with the predetermined pattern by using a photolithographic etching technology, and then using the same process conditions as in the first embodiment. A copper metal film is formed on the aluminum oxide insulating layer with the photoresist layer, and finally the photoresist layer is removed to form the copper wires.

[0071] Therefore, the integrated heat dissipation substrate prepared by the method of the present invention can sort out the following features:

[0072] 1. The thickness of the metal oxide insulator 3 (aluminum oxide insulating layer) is sufficient to provide effective electrical insulation.

[0073] 2. The metal oxide insulator 3 (aluminum oxide insulating layer) has high purity and good compactnes...

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Abstract

An integrated radiation substrate and making method thereof, which contains a metal substrate, a metal oxide insulator for heat conduction formed on metal substrate, wires formed on metal oxide insulator surface. The making method contains A, providing a metal substrate, B, forming metal oxide insulation layer on metal substrate by anode micro-arc technology, C, coating metal membrane by vacuum physics vapor deposition, said invention can obtain higher compactness, better adhesion and radiation effect.

Description

【Technical field】 [0001] The invention relates to a heat dissipation substrate and a manufacturing method thereof, in particular to an integrated heat dissipation substrate and a manufacturing method thereof. 【Background technique】 [0002] For a long time, when the heat dissipation of electronic and optoelectronic components has a small power output, the substrate made of plastic can meet the needs of heat dissipation and electrical insulation at the same time. Due to the popularization of technology products such as information and communication in recent years, such as the increase in market demand for related electronic products such as Dynamic Random Access Memory (DRAM), the manufacturing process of semiconductors and optoelectronic components is also increasing. As the needs of the industry have evolved to the production method of Very Large Scale Integration (VLSI), the heat dissipation problems associated with the use of multilevel interconnects (Multilevel Intercon...

Claims

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Application Information

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IPC IPC(8): H01L21/48H01L23/12H01L23/34
CPCH01L2924/0002
Inventor 何主亮
Owner FENG CHIA UNIVERSITY
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