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Preparation method for ZnO-Thin Film Transistor (ZnO-TFT) based on flexible substrate material

A zinc oxide thin film and flexible substrate technology, applied in the field of microelectronics, can solve problems such as bending and warping, and achieve the effect of simple and easy process and low cost

Active Publication Date: 2015-09-23
JILIN JIANZHU UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The invention provides a method for preparing a zinc oxide thin film transistor based on a flexible substrate material to solve the problems of bending and warping of the flexible substrate material during the growth of the thin film material and the device preparation process

Method used

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  • Preparation method for ZnO-Thin Film Transistor (ZnO-TFT) based on flexible substrate material
  • Preparation method for ZnO-Thin Film Transistor (ZnO-TFT) based on flexible substrate material
  • Preparation method for ZnO-Thin Film Transistor (ZnO-TFT) based on flexible substrate material

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Embodiment 1

[0074] Include the following steps:

[0075] (1) cleaning, drying, and drying of hard substrate and flexible substrate; the hard substrate material is glass, silicon wafer, or stainless steel sheet, and the flexible substrate material is polyimide PI;

[0076] Clean the hard substrate 1, 25mm*25mm and the flexible substrate polyimide 2, 20mm*20mm respectively, the method is:

[0077] (1) First put it into an acetone solution and ultrasonically clean it for 4 minutes at room temperature to remove surface molecular contamination, etc.;

[0078] (2) Then place it in an ethanol solution and ultrasonically clean it for 3 minutes at room temperature to remove residual acetone on the surface;

[0079] (3) Ultrasonic cleaning with deionized water at room temperature for 5 minutes to remove residual ethanol and ionic contamination;

[0080] (4) blow dry with high-purity nitrogen, and dry at 90° C. for 5 minutes in an oven;

[0081] (2) substrate bonding, the substrate bonding materi...

Embodiment 2

[0110] Include the following steps:

[0111] (1) cleaning, drying, and drying of hard substrate and flexible substrate; the hard substrate material is glass, silicon wafer, or stainless steel sheet, and the flexible substrate material is polyimide PI;

[0112] Clean the hard substrate 1, 25mm*25mm and the flexible substrate polyimide 2, 20mm*20mm respectively, the method is:

[0113] (1) First put it into an acetone solution and ultrasonically clean it for 5 minutes at room temperature to remove surface molecular contamination, etc.;

[0114] (2) Then place it in an ethanol solution and ultrasonically clean it for 4 minutes at room temperature to remove residual acetone on the surface;

[0115] (3) Ultrasonic cleaning with deionized water at room temperature for 4 minutes to remove residual ethanol and ionic contamination;

[0116] (4) blow dry with high-purity nitrogen, and dry at 90°C for 4 minutes in a drying oven;

[0117] (2) substrate bonding, the substrate bonding ma...

Embodiment 3

[0146] Include the following steps:

[0147] (1) cleaning, drying, and drying of hard substrate and flexible substrate; the hard substrate material is glass, silicon wafer, or stainless steel sheet, and the flexible substrate material is polyimide PI;

[0148] Clean the hard substrate 1, 25mm*25mm and the flexible substrate polyimide 2, 20mm*20mm respectively, the method is:

[0149] (1) First put it into an acetone solution and ultrasonically clean it for 6 minutes at room temperature to remove surface molecular contamination, etc.;

[0150] (2) Then place it in an ethanol solution and ultrasonically clean it for 5 minutes at room temperature to remove residual acetone on the surface;

[0151] (3) Ultrasonic cleaning with deionized water at room temperature for 5 minutes to remove residual ethanol and ionic contamination;

[0152] (4) blow dry with high-purity nitrogen, and dry at 90° C. for 5 minutes in an oven;

[0153] (2) substrate bonding, the substrate bonding materi...

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Abstract

The invention relates to a preparation method for a ZnO-TFT based on a flexible substrate material, and belongs to the technical field of microelectronics. The method comprises that a hard substrate and a flexible substrate are cleaned, blown dry and dried, the substrates are bonded, a grid material is deposited, an insulating layer material is deposited, a ZnO channel layer material is deposited, and source and drain electrodes are deposited. The preparation method has the advantages that preparation can be carried out at room temperature, technology is easy to implement and low in cost, and the method can be applied to the field of flexible display technology.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a method for preparing a zinc oxide thin film transistor (ZnO-Thin Film Transistor, ZnO-TFT) based on a flexible substrate material. Background technique [0002] At present, flexible display has become an important direction for future development due to its excellent performance characteristics such as ultra-thin, light weight, power saving, and foldable. Fabrication of thin-film transistors (TFTs) based on flexible material substrates is a key step in the realization of flexible functional devices. Compared with hard substrate materials such as silicon and glass, flexible thin film transistors are based on flexible materials such as plastics, which can be bent, wound, and folded at a certain angle. Applied in the field of display, it can be rolled into cylinders and other shapes, and reduced in size to be put into the pockets of clothes worn by people. I...

Claims

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Application Information

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IPC IPC(8): H01L21/34
CPCH01L29/66969
Inventor 杨小天王超高晓红赵春雷郭亮迟耀丹初学峰常玉春朱慧超杨佳吕卅王锐任伟
Owner JILIN JIANZHU UNIVERSITY