Silicon-based low-leakage current double solid-beam movable gate nmos phase detector

Abstract

The silicon-based low-leakage current double-solid-beam movable grid NMOS phase detector of the invention is composed of a double-solid-beam movable grid NMOS tube and a low-pass filter. The NMOS transistor is an enhancement type, fabricated on a Si substrate, the gate is suspended above the gate oxide layer, and together with the pull-down electrode and the insulating layer form a fixed beam movable structure. The pull-down bias voltage of the fixed beam is designed to be equal to the threshold voltage of the NMOS transistor. When both the double solid support beams are pulled down, the input signal is multiplied by the double solid support beam movable grid NMOS transistor, and the phase detection is completed after passing through the low pass filter. When only one of the fixed beams is pulled down, the device has a higher breakdown voltage, and the gated signal is amplified through the double fixed beam movable gate NMOS transistor, so that the same circuit can be used in both signal amplification and phase detection. Switch between different modes. At the same time, due to the design of the fixed-beam movable gate, the leakage current of the device is reduced, and the leakage current power consumption is effectively reduced.

Description

technical field [0001] The invention provides a silicon-based low-leakage current double-solid support beam movable gate NMOS phase detector, which belongs to the technical field of micro-electromechanical systems. Background technique [0002] Due to the rapid development of modern microwave communication technology and radar technology, especially the development of chirp pulse Doppler and phased array radar, the problem of signal waveform must be considered in the time domain. Therefore, there are higher requirements for phase measurement and measurement. To make the signal pass through the transmission network without generating phase distortion, it must be satisfied that the amplitude of the transfer function remains constant and the phase is a linear function of frequency. Therefore, microwave phase detectors play an important role and significance in these fields. [0003] At the same time, for traditional phase detectors based on MOS tubes, with the improvement of ...

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Problems solved by technology

[0003] At the same time, for traditional phase detectors based on MOS tubes, with the improvement of technology level, a series of reliability problems such as hot carrier effect, increased integration, and increased packaging density brought about by the scaling down of MOS circuits It is the internal driving force for the development of integrated circuits in the direction of low voltage and low power consumption

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