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Back scribing method in LED process and forming structure

A single, stealth dicing technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as affecting the external quantum efficiency of light-emitting diodes, blocking light output, etc., to improve product yield and reduce oblique cracks Effect

Active Publication Date: 2015-11-04
ANHUI SANAN OPTOELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Compared with ordinary laser cutting or diamond cutting, it reduces the laser burn area on the side of the wafer or the damage area on the wafer surface, thereby reducing the light loss of the wafer; but because the explosion point 11 is formed inside the substrate 10, during its formation process The material in the explosion point 11 area is ablated by the laser and attached to the side wall of the explosion point 11, thereby blocking the emission of light and affecting the external quantum efficiency of the light-emitting diode

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  • Back scribing method in LED process and forming structure
  • Back scribing method in LED process and forming structure
  • Back scribing method in LED process and forming structure

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Embodiment 1

[0026] See attached Figure 2~4 The backscribing method of the LED manufacturing process in the present invention specifically includes the following steps. First, a substrate 10 is provided, an epitaxial layer is grown on the upper surface of the substrate 10, and a plurality of LED units 20 are fabricated. The substrate 10 can be any one of a sapphire flat substrate, a sapphire patterned substrate, a silicon substrate, a silicon carbide substrate, a gallium nitride substrate, and a glass substrate. During the mass production of LEDs, The sapphire substrate is preferably patterned; then a laser is used to focus on the back surface of the substrate 10 to form a plurality of impurity release holes 12, the diameter of the impurity release holes 12 is preferably 1 to 6 μm, and the impurity release holes 12 face the vertical direction of the epitaxial layer. The straight extension line is located between the adjacent LED units 20; then at the position corresponding to the impurity r...

Embodiment 2

[0029] See attached Figure 5~7 The difference between this embodiment and embodiment 1 is that a reflective layer 30 is first deposited on the back of the substrate 10, and then the reflective layer 30 at the gap position corresponding to each LED unit 20 is removed to form an impurity release hole 31 in the reflective layer 30 , The reflective layer 30 is a metal reflective layer, a distributed Bragg reflective layer, or a multilayer structure composed of a metal reflective layer and a distributed Bragg reflective layer, where the metal reflective layer is an Al layer, Ag layer or Au layer. The present embodiment preferably has high reflectivity The distribution of the Bragg reflective layer; and then along the corresponding position of the impurity release hole two 31, respectively, using laser focusing on the surface of the substrate 10 to make the impurity release hole 12 and use invisible cutting to make the invisible cutting explosion point 11. In the subsequent manufactu...

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Abstract

The invention provides a back scribing method in an LED process and a forming structure. Laser is firstly used for being focused on the back surface of a substrate with multiple LED units, and multiple impurity release holes are formed; then at positions corresponding to the multiple impurity release holes, laser is used for being focused inside the substrate, and multiple invisible cutting explosion points are formed; and the impurity release holes are communicated with the invisible cutting explosion points so as to enable impurities generated during the invisible cutting explosion point forming process to be discharged out of the inner part of the substrate via the impurity release holes, the impurities can be prevented from being attached to the side wall of the invisible cutting explosion point, and the external quantum efficiency of the LED unit is thus reduced.

Description

technical field [0001] The invention belongs to the field of semiconductor preparation, and in particular relates to a back-scribing method in an LED manufacturing process and a formation structure thereof. Background technique [0002] The cutting technology of light-emitting diodes has gradually developed from diamond knife cutting to ordinary laser cutting. Generally speaking, the wavelength of the laser is 355nm or 266nm. Its characteristic is that it can cut both the sapphire substrate and various layers, such as Gallium nitride layer, Bragg reflection layer, metal layer, etc. [0003] See attached figure 1 In recent years, the light-emitting diode cutting technology that has emerged and developed rapidly is stealth laser cutting, which is characterized in that it can penetrate the sapphire substrate 10 and form an explosive point 11 with energy in the sapphire substrate 10, and the explosive point 11 bursts and achieve the purpose of cutting. Compared with ordinary ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L21/268H01L21/78H01L33/12
CPCH01L21/268H01L21/78H01L33/005H01L33/12
Inventor 张家宏陈功周瑜韦静静黄静
Owner ANHUI SANAN OPTOELECTRONICS CO LTD