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Monolithically integrated electrical pumping bragg reflection waveguide terahertz laser device

An integrated electric pump and terahertz technology, applied in semiconductor lasers, lasers, laser parts, etc., can solve the problem of inability to realize terahertz wave laser output, and achieve the effect of strong mode selection, compact structure and reduced application cost.

Active Publication Date: 2015-11-11
吉光半导体科技有限公司
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  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problem that the Bragg reflective waveguide is used alone for nonlinear frequency conversion waveguide or semiconductor laser waveguide, the terahertz wave laser output cannot be realized, and a compact, single-chip integrated electric pump terahertz laser is provided.

Method used

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  • Monolithically integrated electrical pumping bragg reflection waveguide terahertz laser device
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  • Monolithically integrated electrical pumping bragg reflection waveguide terahertz laser device

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Embodiment 1

[0027] Such as image 3 As shown, both the N-DBR and P-DBR of the laser use AlGaAs / Al 0.2 Ga 0.8 As material, in which the high and low refractive index layers AlGaAs and Al 0.2 Ga 0.8 The refractive index of the As material is approximately n H , n L . By controlling the period and duty cycle of the DBRI grating, the output wavelength λ of the first DBR-BRL1 1 =1050nm; by controlling the period and duty cycle of the DBRⅡ grating, the output wavelength of the second DBR-BRL2 is at λ 2 = 1060nm. Two beams of laser light with different wavelengths are coupled into one beam through the Y waveguide 3 and then enter the power amplifier 4, and finally enter the nonlinear waveguide 5 to generate terahertz laser output through the optical difference frequency effect. In the near-infrared band, that is, the pumping light band, the Bragg reflection waveguide works in the suppressed tunneling photonic bandgap guided mode (n L eff H ), using total reflection and photonic bandgap ...

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Abstract

The invention provides a monolithically integrated electrical pumping bragg reflection waveguide terahertz laser device, belongs to the field of photoelectric devices, and aims at solving the problems in existing terahertz laser output. According to the laser device, a bragg reflection waveguide structure is adopted in the vertical direction; the laser device comprises two adjacent distributed bragg reflection laser devices, a Y-waveguide beam coupler, a laser power amplifier and a passive bragg reflection waveguide nonlinear frequency conversion part, wherein the rear cavity surfaces of the two distributed bragg reflection laser devices are used for etching distributed bragg gratings which are slightly different in cycle and duty ratio respectively, so that a certain difference is formed between the output wavelengths of the two laser devices; two input ends of one side of the Y-waveguide beam coupler are respectively connected with the two laser devices; the other ends are coupled to output dual-wavelength laser; the laser power amplifier is connected with an output end of a Y waveguide and is used for carrying out power amplification on the injected dual-wavelength laser; and the passive bragg reflection waveguide nonlinear frequency conversion part is connected with the output end of the laser power amplifier, so that a difference frequency 1 / lambda1-1 / lambda2=1 / lambda3 is generated by the injected laser with two different wavelengths lambda1 and lambda2, thereby realizing output of the terahertz laser lambda3.

Description

technical field [0001] The invention relates to a single-chip integrated and electrically pumped Bragg reflection waveguide nonlinear frequency conversion light source output by terahertz laser, belonging to the technical field of optoelectronic devices. Background technique [0002] Terahertz (THz) waves usually refer to electromagnetic waves with a frequency of 0.1THz-10THz (the corresponding wavelength is 3mm-30μm). It has very broad application prospects in the fields of material structure characterization, biomedicine, environmental monitoring, security inspection and national defense. Terahertz waves can be generated electronically or optically, but each method has advantages and disadvantages. The efficiency of terahertz radiation generated by methods such as photoconductive antenna, optical rectification, plasma oscillation and electronic nonlinear transmission line is very low, and the average power of the emitted terahertz beam is only on the order of nanowatts to ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/187H01S5/343H01S5/042H01S5/06
Inventor 汪丽杰佟存柱田思聪舒世立吴昊王立军
Owner 吉光半导体科技有限公司
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